SI3552DV-T1-E3 Discrete Semiconductor Products |
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Allicdata Part #: | SI3552DV-T1-E3TR-ND |
Manufacturer Part#: |
SI3552DV-T1-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N/P-CH 30V 6TSOP |
More Detail: | Mosfet Array N and P-Channel 30V 1.15W Surface Mo... |
DataSheet: | SI3552DV-T1-E3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA (Min) |
Base Part Number: | SI3552 |
Supplier Device Package: | 6-TSOP |
Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 1.15W |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Gate Charge (Qg) (Max) @ Vgs: | 3.2nC @ 5V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 105 mOhm @ 2.5A, 10V |
Current - Continuous Drain (Id) @ 25°C: | -- |
Drain to Source Voltage (Vdss): | 30V |
FET Feature: | Logic Level Gate |
FET Type: | N and P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SI3552DV-T1-E3 is a three-terminal protected N-channel MOSFET device. It is used for switching and regulating the current flow. The device is made with a small form factor and is designed to provide high-temperature protection to the applications it is used in.
The SI3552DV-T1-E3 has an optimum power efficiency and is ideal for space constrained applications. It provides a low RDS(ON) on resistance and is equipped with several features such as a voltage clamp protection, a current limiting protection, and a temperature limiting protection. The voltage clamp protection feature limits the drain-source voltage to a preset level. The current limiting feature prevents short circuits and overloads. The temperature limiting feature prevents overheating of the device by limiting the maximum temperature of the device to a predefined level.
The SI3552DV-T1-E3 can be used in a variety of applications such as automotive, industrial control, avionics, security systems, and robotics. In automotive applications, the device can be used for switching and controlling the power steering, fuel injectors, and other automotive peripherals. In industrial control applications, the device can be used for switching and controlling various motors, pumps, and other actuators. In avionics applications, the device can be used for controlling the altitude, speed, and other parameters.
The working principle of the SI3552DV-T1-E3 is simple. When a voltage is applied to the gate terminal of the device, the drain and source terminals are connected, through an N-Channel MOSFET. This allows current to flow in a specified direction, depending on the polarity of the applied voltage. The resistance between the drain and source terminals can be adjusted, by tweaking the applied voltage level. To reduce the internal resistance and increase the current flow, a higher voltage can be applied.
The SI3552DV-T1-E3 is a robust, reliable, and cost-effective device which can be used in a broad range of applications. It is easy to install, and provides all the necessary features for efficient and reliable operation. It is also lightweight, making it easy to transport and install in a variety of locations.
The specific data is subject to PDF, and the above content is for reference
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