SI3590DV-T1-E3 Discrete Semiconductor Products |
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Allicdata Part #: | SI3590DV-T1-E3TR-ND |
Manufacturer Part#: |
SI3590DV-T1-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N/P-CH 30V 2.5A 6TSOP |
More Detail: | Mosfet Array N and P-Channel 30V 2.5A, 1.7A 830mW ... |
DataSheet: | SI3590DV-T1-E3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Base Part Number: | SI3590 |
Supplier Device Package: | 6-TSOP |
Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 830mW |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Gate Charge (Qg) (Max) @ Vgs: | 4.5nC @ 4.5V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 77 mOhm @ 3A, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 2.5A, 1.7A |
Drain to Source Voltage (Vdss): | 30V |
FET Feature: | Logic Level Gate |
FET Type: | N and P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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SI3590DV-T1-E3 Application Field and Working Principle
The SI3590DV-T1-E3 is a MOSFET array designed and manufactured by Silicon Laboratories, a leader in the semiconductor industry. It utilizes trench-gate CMOS technology and is designed to provide greater power handling, faster switching, and reduced power consumption. The device includes two N-channel MOSFETs in a single package, each with its own independent gate. With its superior performance, SI3590DV-T1-E3 is ideal for a wide range of applications.
Application Field
One of the primary applications of the SI3590DV-T1-E3 is for motor control. The two MOSFETs can be used separately or in parallel for high current output. Furthermore, it can also be used for lamp dimming, LED brightness control, and switching power supplies. The high speed switching and low on-state resistance enable the device to be used in high-frequency applications, such as power amplifiers and switching power supplies. Additionally, the device can also be used in relay or logic applications, where its low on-state capacitance prevents false switching.
Working Principle
At its core, the SI3590DV-T1-E3 is a MOSFET array, which allows it to perform its various tasks. In order to understand how it works, it is important to understand the principles behind MOSFETs. MOSFETs are voltage-controlled devices, meaning that they are switched on or off depending on the voltage applied to their gates. The more positive the voltage on the gate, the more current is allowed to pass through the MOSFET and the higher the voltage that comes out of its drain. On the other hand, if the voltage on the gate is negative, current will not be allowed to pass through the MOSFET, and the voltage at the drain will be 0. The SI3590DV-T1-E3 operates on the same principles, allowing it to be used for motor control, lamp dimming, and other tasks.
Conclusion
The SI3590DV-T1-E3 is an excellent example of a MOSFET array. It has a variety of uses, ranging from motor control to lamp dimming to switching power supplies. Due to its superior performance, it is ideal for high-frequency applications. Additionally, its low on-state resistance prevents false switching in logic applications. By understanding the principles behind MOSFETs, it is easy to understand how the SI3590DV-T1-E3 works and why it is beneficial in so many situations.
The specific data is subject to PDF, and the above content is for reference
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