SI3588DV-T1-E3 Allicdata Electronics

SI3588DV-T1-E3 Discrete Semiconductor Products

Allicdata Part #:

SI3588DV-T1-E3TR-ND

Manufacturer Part#:

SI3588DV-T1-E3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N/P-CH 20V 2.5A 6TSOP
More Detail: Mosfet Array N and P-Channel 20V 2.5A, 570mA 830mW...
DataSheet: SI3588DV-T1-E3 datasheetSI3588DV-T1-E3 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Base Part Number: SI3588
Supplier Device Package: 6-TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 830mW, 83mW
Input Capacitance (Ciss) (Max) @ Vds: --
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 4.5V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 80 mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.5A, 570mA
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: N and P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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SI3588DV-T1-E3 is a three-channel, low-side switch array. It is a dual N-channel and one P-channel MOSFET power transistor array, providing high- performance switching for applications such as brushed dc motors, solenoid valves, LEDs, and other motor control applications. These power transistors are able to operate from higher voltages, requiring less board space with fewer components, and offering better performance than discrete implementations. The device is constructed from an array of N-channel and P-channel power MOSFETs that are controlled with a common gate. The device offers two low-side switches with two different voltage ratings and one high-side switch.

The SI3588DV-T1-E3 is available in several packages that include surface mount and through-hole packages. The surface mount package has a large body size with a remarkably small board-footprint, making it ideal for applications that require a small size. The through-hole package has small body size, making it suitable for applications that require a large board space is limited. Both package types offer the same performance, but the through-hole package requires more board space.

The operating principle of the power transistors in the SI3588DV-T1-E3 is based on the construction of a MOSFET transistor. The gate is used to control the flow of current between the drain and source. When the gate voltage is greater than the source voltage, the device is “on” and current should flow between the drain and source. To turn the device “off”, the gate voltage must be below the source voltage. The power transistors in the device can handle up to 60V and 12A of load current, making them ideal for applications such as brushless DC motor drivers, solenoid valves, LEDs, and other motor control applications.

The SI3588DV-T1-E3 also offers several packages for simplified switching. The two low-side switches are rated for different voltage levels, allowing for easier interfacing between the device and different power sources. The high-side switch allows for higher side voltage to be used, reducing the size and complexity of the overall application. The device also offers a 5V logic interface for easy switching.

The SI3588DV-T1-E3 is an ideal choice for applications that require high-performance, low-side switching from higher voltages. The device offers the benefits of a small board-footprint, simplified switching, and a high power handling capability. These features make it perfect for a variety of motor control applications such as brushless DC motor drivers, solenoid valves, and LEDs.

The specific data is subject to PDF, and the above content is for reference

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