SI3552DV-T1-GE3 Discrete Semiconductor Products |
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| Allicdata Part #: | SI3552DV-T1-GE3TR-ND |
| Manufacturer Part#: |
SI3552DV-T1-GE3 |
| Price: | $ 1.26 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N/P-CH 30V 6-TSOP |
| More Detail: | Mosfet Array N and P-Channel 30V 1.15W Surface Mo... |
| DataSheet: | SI3552DV-T1-GE3 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 1.26400 |
| 10 +: | $ 1.22608 |
| 100 +: | $ 1.20080 |
| 1000 +: | $ 1.17552 |
| 10000 +: | $ 1.13760 |
| Vgs(th) (Max) @ Id: | 1V @ 250µA (Min) |
| Base Part Number: | SI3552 |
| Supplier Device Package: | 6-TSOP |
| Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power - Max: | 1.15W |
| Input Capacitance (Ciss) (Max) @ Vds: | -- |
| Gate Charge (Qg) (Max) @ Vgs: | 3.2nC @ 5V |
| Series: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 105 mOhm @ 2.5A, 10V |
| Current - Continuous Drain (Id) @ 25°C: | -- |
| Drain to Source Voltage (Vdss): | 30V |
| FET Feature: | Logic Level Gate |
| FET Type: | N and P-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The SI3552DV-T1-GE3 is a power MOSFET array manufactured by Vishay Semiconductor which combines four identical N-channel depletion-mode MOSFETs into a single package. The device offers a reliable, low-cost solution for dc–dc conversion and motor control applications in home appliances and industrial equipment. With its low on-resistance ratings and low gate charge, the SI3552DV-T1-GE3 offers a high efficiency solution for the designer.
The SI3552DV-T1-GE3 consists of a series of N-channel MOSFETs connected in parallel, each of which can be turned on and off by applying an appropriate voltage to its gate. Each of the MOSFETs in the array is rated for a maximum drain-to-source voltage (Vdss) of 500V, and a maximum drain current (ID) of 20A. The device features an integrated, high-side bootstrap diode, and provides protection against electrostatic discharge (ESD) up to 4kV HBM.
The SI3552DV-T1-GE3 provides a high-efficiency solution for dc–dc conversion and motor control applications due to its low on-resistance ratings and low gate charge. The devices low on-resistance ratings allow it to handle high current levels with minimal energy loss. Its low gate charge minimizes the time it takes for the device to turn on and off, allowing for higher switching speeds and improved response times. In addition, the integrated bootstrap diode helps to reduce the driver requirements for high-side switches, allowing for simpler circuit designs.
In addition to its high efficiency, the SI3552DV-T1-GE3 also provides robust protection against ESD. The integrated ESD protection helps to ensure that the device can survive the environmental stresses associated with automotive and other environments. The device is also AEC-Q101 certified, meaning it is approved for use in automotive applications.
The SI3552DV-T1-GE3 is a power MOSFET array that combines four identical N-channel depletion-mode MOSFETs into a single package. The device is designed to provide a high efficiency, low-cost solution for dc–dc conversion and motor control applications. It features low on-resistance ratings, low gate charge and integrated ESD protection, making it an ideal choice for automotive and other harsh environments. In addition, its AEC-Q101 certification make it an approved solution for use in automotive applications.
The specific data is subject to PDF, and the above content is for reference
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SI3552DV-T1-GE3 Datasheet/PDF