SI3585DV-T1-GE3 Discrete Semiconductor Products

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SI3585DV-T1-GE3 Application Field and Working Principle

The SI3585DV-T1-GE3 is an advanced Field Effect Transistor (FET) array equipped with 3 N-channel MOSFETs, which is developed and manufactured by Siliconix. It is mainly used in various telecommunications, computer, peripheral and logic operations.

The Structure and Features of SI3585DV-T1-GE3

The SI3585DV-T1-GE3 includes 3 identical n-channel MOSFETs, each of which has a drain-gate capacitance that is lower than the capacitance of two external capacitors. This greatly reduces the input capacitance, improves the switching speed, and consequently provides better performance. The VDSS voltage is 200 V, with a maximum drain current of 4.3 A, a total on-resistance of 7 mΩ and a power dissipation rating of 10 W. Moreover, it uses a space-saving DFN2020-3 (5-5-5) package that can reduce the system size.

Working Principle of SI3585DV-T1-GE3

The three MOSFETs in the SI3585DV-T1-GE3 are connected in series, and each MOSFET has its own gate. When the control voltage is applied, the electric field between the gate and the drain electrode of each MOSFET will be On. The gate-source terminal of each MOSFET is connected to the Next N-channel MOSFET, which connects the In-channel (source) of the first MOSFET to the out-channel (drain) of the third MOSFET. Consequently, the voltage applied to the gates of all three MOSFETs will be equal to the drain-source voltage, and the output current will be equal to the sum of the current flowing through the three individual MOSFETs in the array.

Application Field of SI3585DV-T1-GE3

The SI3585DV-T1-GE3 can be deployed in various telecommunication and computer systems, such as VoIP phone systems, digital logic ICs, base station controllers, cellular base transceiver stations, etc. Its 3 N-channel MOSFETs can provide excellent performance for applications that require high speed and low power consumption. In addition, its low thermal resistance makes it an ideal choice for applications that require large currents and high temperatures.

Conclusion

The SI3585DV-T1-GE3 is an advanced field effect transistor array that can be used in a variety of applications. Its 3 identical N-channel MOSFETs provide fast switching speed, low power consumption, and low thermal resistance. This makes it a great choice for high-speed applications that require excellent performance and reliability.

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