SI3588DV-T1-GE3 Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	450mV @ 250µA (Min)
Base Part Number:	SI3588
Supplier Device Package:	6-TSOP
Package / Case:	SOT-23-6 Thin, TSOT-23-6
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power - Max:	830mW, 83mW
Input Capacitance (Ciss) (Max) @ Vds:	--
Gate Charge (Qg) (Max) @ Vgs:	7.5nC @ 4.5V
Series:	TrenchFET®
Rds On (Max) @ Id, Vgs:	80 mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C:	2.5A, 570mA
Drain to Source Voltage (Vdss):	20V
FET Feature:	Logic Level Gate
FET Type:	N and P-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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The SI3588DV-T1-GE3 is an integrated chip from Vishay Semiconductor that integrates FET/MOSFET transistors into an array. It is designed for industrial applications, and can be used for a wide range of applications such as power supplies, motor controls, automotive electronics, consumer electronic devices, and signal switching.The SI3588DV-T1-GE3 is built with a power MOSFET, or metal-oxide semiconductor field-effect transistor (MOSFET). MOSFETs are voltage-controlled transistors that are used to regulate current. They are made up of three distinct components: gate, drain, and source, each with their own distinct roles. The gate is responsible for controlling the flow of current and activating the MOSFET. The drain and source are responsible for connecting to the load and power supply, respectively.When the gate receives an input signal, an electric field is created between the gate and the source. This then changes the conductivity of the n-type and p-type material, thus allowing current to pass through. The amount of current that passes is determined by the input signal, which makes it easy to control the current flow with just one signal.The SI3588DV-T1-GE3 is designed to withstand high power applications, such as motor controls, thanks to its 12.5V gate-to-source voltage and 40V drain-to-source voltage. It also has a low on-state drain-to-source resistance of 8 mΩ, which makes it highly efficient at carrying large currents.The SI3588DV-T1-GE3 is also well suited for use in signal switching applications, thanks to its fast switching times. It can switch between two signals at speeds of up to 300ns, making it an ideal choice for high-speed applications. The SI3588DV-T1-GE3 also features a low on- resistance, which allows it to switch between two signals without generating much heat or power loss.The SI3588DV-T1-GE3 is a highly efficient and reliable integrated chip for a wide range of applications. Its combination of high-power ratings, fast switching speeds, and low-resistance makes it an ideal choice for industrial applications, like motor controls, power supplies, and automotive systems. The SI3588DV-T1-GE3 is also well suited for signal switching applications, such as consumer electronic devices and various other applications that require fast switching speeds and low-resistance.

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