SI4774DY-T1-GE3 Discrete Semiconductor Products |
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| Allicdata Part #: | SI4774DY-T1-GE3TR-ND |
| Manufacturer Part#: |
SI4774DY-T1-GE3 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CHANNEL 30V 16A 8SO |
| More Detail: | N-Channel 30V 16A (Tc) 5W (Tc) Surface Mount 8-SO |
| DataSheet: |  SI4774DY-T1-GE3 Datasheet/PDF |
| Quantity: | 1000 |
Specifications
| Vgs(th) (Max) @ Id: | 2.3V @ 1mA |
| Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package: | 8-SO |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TA) |
| Power Dissipation (Max): | 5W (Tc) |
| FET Feature: | Schottky Diode (Body) |
| Input Capacitance (Ciss) (Max) @ Vds: | 1025pF @ 15V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 14.3nC @ 4.5V |
| Series: | SkyFET®, TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 9.5 mOhm @ 10A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 16A (Tc) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Last Time Buy |
| Packaging: | Tape & Reel (TR) |
Description
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The SI4774DY-T1-GE3 transistor is an exceptional single field-effect device for a variety of applications. It has a low-voltage threshold, which makes it particularly well-suited for high-frequency circuits. The integrated circuit is only 2.5 µm in size and operates within a wide range of voltages, making it easy to use in a variety of circuits. Additionally, the transistor\'s exceptional robustness also makes it a good choice for harsh environments or high-voltage applications.The SI4774DY-T1-GE3 transistor is a depletion-mode FET (Field Effect Transistor). It is composed of two terminals: the source and the drain. It works in the same manner as an N-channel MOSFET in that the drain current is controlled by the voltage difference between the gate and the source, as well as the magnitude of the gate voltage. The drain current can be adjusted and monitored as it is adjusted.The SI4774DY-T1-GE3 transistor is particularly useful in high-frequency applications due to its low turn-on threshold and high channel conductance. It is more resistant to noise than many other types of transistors and offers a better signal-to-noise ratio. Additionally, the transistor is fast-switching, offers low power consumption, and is sensitive to smaller signals.In terms of performance and design, the SI4774DY-T1-GE3 transistor is quite remarkable. It is characterized by an extremely low input capacitance, providing good common-mode rejection and a higher-frequency range than many comparable devices. It is also robust, with a long lifetime and minimal degradation over time. Additionally, the transistor can be used in a variety of configurations and performs very well in power switching applications.In summary, the SI4774DY-T1-GE3 transistor is an excellent choice for a variety of applications, especially those operating in high-frequency ranges. Its low-voltage threshold and robust design make it suitable for use in a variety of environments, and its small size makes it easy to use in many circuits. It is an exceptional single field-effect device for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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