SI8808DB-T2-E1

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SI8808DB-T2-E1 is part of a select group of transistors from the FETs and MOSFETs family that serves as a single component for a variety of application fields. This particular type has several functionality options and features that enable it to meet different needs in industrial, automotive, commercial and military settings. This transistor provides superior performance in harsh environments and is an economical solution when searching for a reliable transistor.

SI8808DB-T2-E1 transistors are packaged in a DFN-8L package and are ideal for applications where a small size and high-power performance are required. This type of transistor operates on a voltage range of 4.5 to 18 volts and a current range of 1.1 to 9.7 Amperes. It features a common-source, common-drain and common-emitter design. Its output impedance is very low, which makes it suitable for A/D and D/A converters and other applications requiring higher speed and ultra-low noise.

A unique functioning of this transistor is its ability to be used in applications requiring low voltage operation. It operates with optimal gate-source voltage of 5 volts, gate-drain voltage of 5 volts and source-drain voltage of 4.5 volts. This makes SI8808DB-T2-E1 ideal for applications that require low voltage operation. The transistor also has a low saturation voltage, which further improves its suitability for low voltage operation.

This transistor is available in several different configurations. This includes with a dual-gate design and with P and N-type, which enhances its ability to be customized for different application fields. It is also available with a built-in logic circuit, which provides greater flexibility.

In terms of its working principle, the SI8808DB-T2-E1 utilizes a field-effect transistor (FET) design. This means that electric current is controlled by electric fields. The gate of the transistor is typically the junction formed between two or more electric fields generated by an applied voltage. The electric fields can then be opened and closed, allowing current to flow or to be blocked.

This type of transistor features an efficient switching speed. When a voltage is applied to the gate, it only requires a very small amount of current to cause the transistor to switch on or off. This makes it ideal for high-speed devices, such as digital and RF circuits. The switching speed also improves the power efficiency of the device.

The SI8808DB-T2-E1 offers a reliable and efficient solution for a variety of applications. Its small size and low-voltage operation offer excellent performance in harsh and industrial environments. Its switching speed, logic circuit design, and dual-gate configuration also offer great flexibility for different applications. Its reasonable price point makes it an economical solution when looking for a reliable transistor.

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