
Allicdata Part #: | SI8824EDB-T2-E1TR-ND |
Manufacturer Part#: |
SI8824EDB-T2-E1 |
Price: | $ 0.09 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 20V 2.1A MICROFOOT |
More Detail: | N-Channel 20V 500mW (Ta) Surface Mount 4-Microfoo... |
DataSheet: | ![]() |
Quantity: | 33000 |
3000 +: | $ 0.08344 |
Vgs(th) (Max) @ Id: | 800mV @ 250µA |
Package / Case: | 4-XFBGA |
Supplier Device Package: | 4-Microfoot |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 500mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 400pF @ 10V |
Vgs (Max): | ±5V |
Gate Charge (Qg) (Max) @ Vgs: | 6nC @ 4.5V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 75 mOhm @ 1A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.2V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | -- |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The SI8824EDB-T2-E1 is a type of single-chip FET (field-effect transistor) that is used for a broad range of applications. This particular FET is manufactured by Siliconix and can be found in a variety of electronic products. It is a type of silicon N-channel MOSFET (metal–oxide–semiconductor field-effect transistor) that is designed to provide high-speed switching, low capacitance and low power consumption. The SI8824EDB-T2-E1 can be used for a wide range of applications including power supply, radio frequency radio and high-frequency switching circuits.
A field-effect transistor works based on the principles of semiconductor physics. A current that is driven through a gate, or control terminal, affects the flow of current through the transistor\'s source and drain. This type of transistor is divided into two main classes, enhancement-mode and depletion-mode. The SI8824EDB-T2-E1 is classified as an enhancement-mode FET, which means that when a voltage is applied to the gate, it will increase the current between the source and the drain.
The enhancement that is provided by this type of MOSFET allows it to operate at much higher speeds than traditional transistors. This makes it an ideal choice for many applications where speed is of the utmost importance. The SI8824EDB-T2-E1 is particularly well-suited for high-frequency switching circuits as it is capable of switching signals at up to 50 MHz. Additionally, this MOSFET can operate at temperatures of up to 140°C.
This type of FET is also notable for its low capacitance and low power consumption. This makes it a great choice for power supply applications, as it can reduce power consumption by up to 30%. Additionally, the SI8824EDB-T2-E1 is highly resistant to electrostatic discharge, both from the gate and from the applied voltage. This is an important characteristic for circuit protection.
In addition to its wide range of applications, the SI8824EDB-T2-E1 is also notable for its low cost. It is a relatively inexpensive single-chip FET, which makes it a popular choice for designers who are looking to save costs while still getting the performance they need. Furthermore, the FET is available in a variety of packages, making it easy to integrate into any application.
In summary, the SI8824EDB-T2-E1 is a type of single-chip MOSFET that is designed for a broad range of applications. It is an enhancement-mode FET that is capable of switching signals at high speeds and is notable for its low power consumption and low capacitance. This type of FET is also relatively inexpensive and is available in a variety of packages, making it an ideal choice for many applications.
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