SI8809EDB-T2-E1

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SI8809EDB-T2-E1 is a N-channel enhancement-mode 4th generation IGBT designed and developed by Semelab® division of TT electronics. It is designed to operate in a wide range of environments, from consumer electronics to power generation and medical applications. The device is constructed of a horizontal n-channel power transistor in conjunction with a lateral n-channel enhancement-mode MosFET.

The SI8809EDB-T2-E1 is an excellent choice for a variety of applications providing superior performance and cost effectiveness. With a 4 A peak pulsed output current, and a maximum drain-to-source voltage of 40 V, this device offers high-efficiency and extended power handling capability.

One of the main advantages of the SI8809EDB-T2-E1 is its low-loss characteristics. It has a low on-resistance and junction-to-case thermal resistance, resulting in decreased conduction losses and improved overall power efficiency. In addition, its superior gate charge characteristics offer excellent performance under high gate voltage changes.

The SI8809EDB-T2-E1 is also designed to operate in a wide temperature range, withstanding temperatures up to 175ºC, making it suitable for industrial and medical applications. It has a low-noise performance and higher switching frequency than comparable IGBTs.

The SI8809EDB-T2-E1 utilizes a vertical n-channel power transistor to provide exceptional performance in high frequency switching applications. The device also features a built-in body diode, making it a great choice for applications requiring rectification. The body diode is built in as a reverse-biased diode between the drain and source of the device, allowing for easy drive control and improved reliability.

The SI8809EDB-T2-E1 is also capable of operating in a wide supply voltage range, from 10 to 35 V. This enables it to be used in a variety of different applications, such as home appliances, elevator control systems and industrial equipment. In addition, it has built-in protection features, such as over temperature protection.

In addition to its excellent performance, the SI8809EDB-T2-E1 is a very cost-effective solution. It is available in the large to-220f package and is highly efficient, making it ideal for many applications.

The working principle of the SI8809EDB-T2-E1 is simple and straightforward. When the gate voltage is applied between the drain and source, a current flows and activates the device, allowing power to flow. The body diode inside the device helps to minimize any transient voltage events, allowing the device to operate at a high level of efficiency.

The SI8809EDB-T2-E1 is an ideal choice for a wide range of applications, from power supplies and converters to inverters, motor control, and switching magnifiers. With its superior performance and cost-effectiveness, it is one of the best options available for those who need high efficiency, reliability, and extended life.

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