SI8810EDB-T2-E1 Discrete Semiconductor Products

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The SI8810EDB-T2-E1 is a high performance and highly integrated insulated-gate bipolar transistor (IGBT) module. It consists of two insulated-gate bipolar transistors (IGBTs) connected in anti-parallel |along with their anti-parallel freewheeling diodes|. This module is used for controlling higher power in a wide variety of applications. It is designed for use in automotive, industrial and lighting applications.

IGBTs are semiconductor devices with advantages over traditional metal oxide semiconductor field effect transistors (MOSFETs) and bipolar junction transistors (BJTs). They offer the best of both worlds, combining the low on-state voltage drop of the BJT with the much lower switching losses of the MOSFET. This makes them ideal for controlling higher power, as well as for higher frequency and higher currents.

The SI8810EDB-T2-E1 is designed for higher power control applications such as motor control, power switching and power factor correction. It is capable of operating at high currents, up to 25A, with a low on-state voltage drop of only 2.2V. This low on state voltage drop translates into improved efficiency and higher power handling capability.

The module also features a high speed switching capability, with a switching frequency of up to 30KHz. This makes it suitable for a variety of applications including electric vehicles, fans, pumps and lighting. Additionally, the module has a high voltage rating of 1200V, ensuring reliable operation even under harsh conditions.

In terms of working principle, the SI8810EDB-T2-E1 is an insulated-gate bipolar transistor (IGBT) module. It consists of two independent bipolar transistors connected in anti-parallel, each with its own gate and freewheeling diode. The two transistors are connected in anti-parallel, which means that they conduct in opposite directions, based on the control voltage applied to the gate of each transistor.

When the voltage level at the gate of one of the transistors is increased, it will become the "on" state, allowing current to flow through the device. If the voltage level of the other transistor\'s gate is decreased, it will become the "off" state, blocking the current from flowing. By controlling the voltage levels at the gates of the two transistors, the power switching state of the module is determined, enabling it to function as a switch for controlling higher power.

Overall, the SI8810EDB-T2-E1 is an ideal high power switching solution for a variety of applications. With its low on-state voltage drop and high switching frequency, it offers high performance and reliability. Additionally, its high voltage rating ensures reliable operation even under challenging conditions.

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