SI8817DB-T2-E1

Vgs(th) (Max) @ Id:	1V @ 250µA
Package / Case:	4-XFBGA
Supplier Device Package:	4-Microfoot
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	500mW (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	615pF @ 10V
Vgs (Max):	±8V
Gate Charge (Qg) (Max) @ Vgs:	19nC @ 8V
Series:	TrenchFET®
Rds On (Max) @ Id, Vgs:	76 mOhm @ 1A, 4.5V
Drive Voltage (Max Rds On, Min Rds On):	1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C:	--
Drain to Source Voltage (Vdss):	20V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Introduction

SI8817DB-T2-E1 is a field effect transistor (FET) that belongs to the MOSFET (Metal Oxide Semiconductor Field Effect Transistor) single family. With its fast actions and compact size, the SI8817DB-T2-E1 is a popular choice for a variety of applications, from telecommunications to energy control. This article will discuss the various applications for the SI8817DB-T2-E1, as well as its underlying working principle.

Application Fields of the SI8817DB-T2-E1

The SI8817DB-T2-E1 is a versatile component and can be found in a wide range of electronic devices, from consumer products to industrial equipment. The following are examples of applications of the SI8817DB-T2-E1:

• Consumer Electronics: The SI8817DB-T2-E1 is commonly used in consumer electronics, such as radio and TV sets, DVD and Blu-ray players, and gaming consoles. The SI8817DB-T2-E1 can be used for audio-video switching, as well as for controlling the power of connected devices.
• Mobile Communications: Mobile phones, tablets, and other similar devices use the SI8817DB-T2-E1 for switching on and off RF transmitters, as well as for controlling the power of the transmitter. The SI8817DB-T2-E1 is also used for audio-video switching.
• Industrial Equipment: Large-scale industrial equipment such as solar power controllers, fuel cell controllers, automotive power control, and other power electronics use SI8817DB-T2-E1 transistors to improve efficiency and reduce power losses. The SI8817DB-T2-E1 is also used in active switches, position sensors, and other industrial control systems.
• Telecommunications: The SI8817DB-T2-E1 is largely used in telecommunications. The SI8817DB-T2-E1 is used in Base-Station power circuit components such as power amplifiers, RF switch circuits, and microwave amplifiers.

Working Principle of the SI8817DB-T2-E1

The SI8817DB-T2-E1 is a MOSFET single transistor and consists of five pins: source, drain, gate, substrate, and body. The source and drain pins are the input and output terminals and are connected to the power sources. The gate pin is used to modify the conductivity of the source-drain channel by changing the electric field between the source and the gate. The substrate pin acts as a controlling pin and is used to balance the charge carriers (electrons and holes) between the source and the drain.The SI8817DB-T2-E1 operates on the principle of capacitance. When a small voltage is applied to the gate pin, it creates an electric field between it and the substrate terminal, which induces a charge flow between the two pins and modifies the electric field of the source-drain channel. This modulation of the electric field changes the conductivity of the source-drain channel and turns the transistor on or off depending on the voltage applied to the gate pin.

Conclusion

The SI8817DB-T2-E1 is a compact, fast-switching, and reliable FET transistors belonging to the MOSFET single family. Its versatility makes it suitable for a variety of applications, from consumer electronics to large-scale industrial equipment. The SI8817DB-T2-E1 works on the principle of capacitance, where a modulation of the electric field between the gate and the substrate pins changes the conductivity of the source-drain channel.

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