Allicdata Part #: | SIDR140DP-T1-GE3TR-ND |
Manufacturer Part#: |
SIDR140DP-T1-GE3 |
Price: | $ 0.85 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CHAN 25V PPAK SO-8DC |
More Detail: | N-Channel 25V 79A (Ta), 100A (Tc) 6.25W (Ta), 125W... |
DataSheet: | SIDR140DP-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.77904 |
Vgs(th) (Max) @ Id: | 2.1V @ 250µA |
Package / Case: | PowerPAK® SO-8 |
Supplier Device Package: | PowerPAK® SO-8DC |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 6.25W (Ta), 125W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 8150pF @ 10V |
Vgs (Max): | +20V, -16V |
Gate Charge (Qg) (Max) @ Vgs: | 170nC @ 10V |
Series: | TrenchFET® Gen IV |
Rds On (Max) @ Id, Vgs: | 0.67 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 79A (Ta), 100A (Tc) |
Drain to Source Voltage (Vdss): | 25V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SIDR140DP-T1-GE3 is an advanced single-level MOSFET, designed for a wide range of applications. It features high power efficiency, low input capacitance, and excellent thermal performance, making it a perfect choice for various applications. The SIDR140DP-T1-GE3 is especially suitable for motor drives, ac motor speed control, and inverter systems.
The SIDR140DP-T1-GE3 is a depletion-mode MOSFET, meaning that the current flowing through the device varies inversely with gate voltage. In other words, increasing gate voltage decreases the current flowing through the device. This is in contrast to an enhancement-mode MOSFET, in which an increase in gate voltage increases the current flowing through the device. The SIDR140DP-T1-GE3 has a built-in synchronous diode which helps to reduce switching losses.
The SIDR140DP-T1-GE3 MOSFET is composed of four distinct regions, each with its own specific purpose. The drain region forms the output terminal, and is responsible for carrying current from the device. The source region is the input terminal, and is responsible for providing current to the device. The body region is between the drain and source, and helps facilitate the flow of current between them. The gate region acts as a control terminal, and is responsible for modulating the flow of current through the device.
The MOSFET is designed for low gate voltages, and can be driven directly from a logic gate, such as an and/or gate. When a gate voltage is applied, it modulates the current that flows between the source and drain regions. When the gate voltage is low, the device is off and there is no conductivity between the source and drain. When the gate voltage is high, the device is on and current flows freely between the source and drain.
The SIDR140DP-T1-GE3 MOSFET is ideal for applications requiring high power efficiency and excellent thermal performance. The device provides low input capacitance and fast switching, making it suitable for motor drives and inverter circuits. In addition, the built-in synchronous diode helps reduce switching losses. The MOSFET is designed for a wide range of applications, and is especially suitable for motor drives, ac motor speed control, and inverter systems.
The specific data is subject to PDF, and the above content is for reference
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