SIDR626DP-T1-GE3

Vgs(th) (Max) @ Id:	3.4V @ 250µA
Package / Case:	PowerPAK® SO-8
Supplier Device Package:	PowerPAK® SO-8DC
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	6.25W (Ta), 125W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	5130pF @ 30V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	102nC @ 10V
Series:	TrenchFET® Gen IV
Rds On (Max) @ Id, Vgs:	1.7 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On):	6V, 10V
Current - Continuous Drain (Id) @ 25°C:	42.8A (Ta), 100A (Tc)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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<h1>Introduction</h1>The SIDR626DP-T1-GE3 is a silicon N- and P- channel enhancement mode MOSFET designed specifically for 3.3 V logic VRM applications. This device features very low RDS(on) and fast switching speed, allowing for efficient power conversion and energy saving, making it ideal for voltage regulator and DC/DC converter applications.<h1>SIDR626DP-T1-GE3 Application Field</h1>The SIDR626DP-T1-GE3 is mainly used in voltage regulator modules (VRMs). These are power switch ICs that are used to provide a constant voltage regulation and to optimize efficiency in applications such as computers and laptops. VRMs convert a wide input voltage to a narrow output voltage and then optimize the power conversion efficiency.The SIDR626DP-T1-GE3 is used in applications where high efficiency, fast switching speeds and low RDS(on) are critical for optimum performance. These applications include laptop or audio power amplifiers, flat panel displays, mobile phones, and other small battery-powered electronics.<h1>SIDR626DP-T1-GE3 Working Principle</h1>The SIDR626DP-T1-GE3 is based on an enhancement-mode MOSFET structure. This device is designed to provide high performance and efficiency, while maintaining minimal board space.The voltage regulator module (VRM) is typically used to convert a wide input voltage range to a narrow output voltage range. In order to do this efficiently, the SIDR626DP-T1-GE3 MOSFET is used to switch the input voltage on and off, while maintaining a desired output voltage.The device works by controlling the gate voltage (VGS) of the MOSFET. When the VGS is increased, the resistance between the source and the drain (RDS(on)) decreases, allowing more current to flow through the device. When the VGS is decreased, the current flow is decreased.By controlling the VGS, the VRM can control the output voltage and the efficiency of the power conversion. This ensures that the desired output voltage is achieved, while maintaining a high power conversion efficiency.<h1>Conclusion</h1>The SIDR626DP-T1-GE3 is a high-performance enhancement mode MOSFET that is specifically designed for 3.3 V logic VRM applications. This device is suitable for use in voltage regulator modules and other applications where high efficiency and fast switching speeds are required. It works by controlling the gate voltage to reduce the resistance between the source and the drain, allowing the desired output voltage to be achieved while maintaining a high power conversion efficiency.

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