Allicdata Part #: | SIDR402DP-T1-GE3TR-ND |
Manufacturer Part#: |
SIDR402DP-T1-GE3 |
Price: | $ 0.89 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CHAN 40V PPSO-8DC |
More Detail: | N-Channel 40V 64.6A (Ta), 100A (Tc) 6.25W (Ta), 12... |
DataSheet: | SIDR402DP-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.80544 |
Vgs(th) (Max) @ Id: | 2.3V @ 250µA |
Package / Case: | PowerPAK® SO-8 |
Supplier Device Package: | PowerPAK® SO-8DC |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 6.25W (Ta), 125W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 9100pF @ 20V |
Vgs (Max): | +20V, -16V |
Gate Charge (Qg) (Max) @ Vgs: | 165nC @ 10V |
Series: | TrenchFET® Gen IV |
Rds On (Max) @ Id, Vgs: | 0.88 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 64.6A (Ta), 100A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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Modern electronic devices must be constantly evolving to meet the needs of modern technology. One of the most important components of these devices is the transistor, which is used to control the conduction of electrical current between two different points. The SIDR402DP-T1-GE3 transistor is significant due to its wide range of applications and its high ratings in terms of performance. This article will examine the application field, working principle and function of the SIDR402DP-T1-GE3 transistor, as well as its advantages over other similar components.
The Application Field of the SIDR402DP-T1-GE3 Transistor
The SIDR402DP-T1-GE3 is commonly used in industrial and automotive devices. This device is designed to be used in cases where it needs to provide power, amplify signals and filter to reduce noise. As such, it is heavily used in medium- to large-scale circuit boards, power distribution systems and motor control. It is also used in devices requiring a high switching frequency such as electronic toys, HVAC systems, security systems and audio/video equipment.
The Working Principle of the SIDR402DP-T1-GE3
The SIDR402DP-T1-GE3 transistor is based on Field Effect Transistor (FET) technology. FETs are made up of three terminal electrodes; the source, the drain and the gate. The gate determines the flow of current between the source and the drain. This transistor is made up of two P-type regions, known as source and drain, with one N-type region, known as the gate region. When a voltage is applied between the source and the gate, the current from the gate to the source is increased, allowing it to control the conduction of current between the source and the drain.
The Function of the SIDR402DP-T1-GE3
The SIDR402DP-T1-GE3 is a power transistor which is capable of switching large voltages with high current ratings. It is commonly used as a switch in power supply, motor control and high-voltage switching applications. It is also used as an amplifier in audio and video applications. It can be used to provide a wide range of output currents from low- to high-current ratings.
Advantages of the SIDR402DP-T1-GE3
The SIDR402DP-T1-GE3 transistor has several advantages over other transistors such as a high breakdown voltage and low forward-voltage drop. This makes it ideal for high-voltage switching and power applications. In addition, this component has an incredibly small size making it suitable for use in high-density circuitry. It also has low heat dissipation and is unaffected by most common contaminants, providing greater reliability than other types of transistors.
The SIDR402DP-T1-GE3 is an extremely versatile component as it can be used in a wide range of applications. It is suitable for use in industrial and automotive devices, power supplies, motor control, audio/video equipment and more. Its small size and reliable performance make it a great choice for any circuit-board design.
The specific data is subject to PDF, and the above content is for reference
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