SIHD3N50D-E3

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The SIHD3N50D-E3 is a single channel, high-performance and low-on-resistance transistor developed by Toshiba Corporation and can be classified under Transistors – FETs, MOSFETs – single. It is a non-logic device with a maximum voltage (VDSS) of 500 V and the maximum drain current of 46 A, along with a high drain source breakdown voltage of 500V (at Tj=25C) which makes it capable of dealing with a wide range of high voltage and large current applications.

This type of transistor is typically used in applications such as motor drive systems, DC-DC converters, load switching devices, classes D amplifiers and h-bridge motor drivers. It also has several features built-in such as a temperature protection circuit and an anti-saturation protection circuit which makes it quite convenient when used in high power applications.

The basic idea behind the working of this type of transistor is very simple. It consists of a source terminal and two larger outer drain terminals. When a voltage is applied to the source terminal, a field is created between the drains and the source terminal. This field, known as the Gate Effect, helps in controlling the flow of current from one drain to the other.

When the voltage between the source and the gate is high enough, the transistor is “ON”, and current will flow from one drain to the other, allowing a large current to pass from the source to the drains, thus allowing the current to pass through the load. On the other hand, when the voltage between the source and the gate is low enough, the transistor is “OFF”, and current will not flow, thus preventing the flow of current through the load. This phenomenon is called the “All-or-Nothing Principle” and is the basic working principle of this type of transistor.

The SIHD3N50D-E3 also has a very low on-resistance of 0.0056 ohms and a very high breakdown voltage of 500V (at Tj=25C). This makes it a suitable choice for applications dealing with high voltages and large currents. It is also very reliable and is built with a high-speed performance and a low gate-charge design.

Overall, the SIHD3N50D-E3 is an excellent transistor for dealing with high power and large current applications. Its high voltage, high current, and low resistance characteristics make it an ideal choice for various types of applications. It also has several safety features like temperature and anti-saturation protection circuits making it a safe and reliable device for a wide range of applications.

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