SIHD5N50D-E3

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The SIHD5N50D-E3 is a power MOSFET (metal-oxide-semiconductor field-effect transistor) designed for use as a high-speed switch in power electronic applications. It has an integrated gate structure that allows it to be operated at higher frequencies, providing low on-resistance and high commutation speeds. The device is manufactured using advanced power MOSFET technology to deliver excellent switching performance at very high frequencies.

The SIHD5N50D-E3 has a high voltage capability (500V), allowing it to be used in a wide range of applications. For example, it can be used in DC-DC converters, motor drives, powerfactor correction (PFC), LED lighting, and other power electronics applications. The device is also suitable for use in high-temperature environments, such as automotive, industrial, and aerospace applications.

The SIHD5N50D-E3 has both a single channel and dual channel MOSFET. The single channel MOSFET is used in applications where a single switch is required. It is capable of switching currents up to 45A and has a low threshold voltage (1.8V) for fast turn-on. The dual channel MOSFET is used in applications where two switches are needed. It is able to switch currents up to 30A and has a low threshold voltage (3V) for fast turn-on. Both types are ESD (electrostatic discharge) protected.

The SIHD5N50D-E3 is able to operate at high-switching frequencies due to its low on-resistance and high commutation speed. It can switch currents up to 200A without the need for a cooling system, making it suitable for moderate switching applications. The on-resistance and gate charge characteristics remain relatively constant over a wide range of temperatures, allowing the device to be used in a wide range of industrial and automotive applications.

The working principle of the SIHD5N50D-E3 is based on the operation of the MOSFET. When the gate voltage exceeds the threshold voltage, the MOSFET starts to conduct current through the drain-source channel and the drain-source voltage drops to zero. This causes the current through the device to be limited by the on-resistance, resulting in low power dissipation and increased efficiency. The device is also designed to minimize switching losses, thus allowing for high-frequency operation.

In summary, the SIHD5N50D-E3 is a high-speed switch designed for use in power electronic applications. Its high voltage capability and low on-resistance enables it to be used in a wide range of industrial and automotive applications. The device is capable of switching currents up to 200A without the need for a cooling system, making it suitable for moderate switching applications. Its low on-resistance and high commutation speed also allows it to operate at high-switching frequencies. All these features make the SIHD5N50D-E3 a good choice for power electronic applications.

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