| Allicdata Part #: | SIHD6N65E-GE3-ND |
| Manufacturer Part#: |
SIHD6N65E-GE3 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 650V 7A TO252 |
| More Detail: | N-Channel 650V 7A (Tc) 78W (Tc) Surface Mount D-PA... |
| DataSheet: |  SIHD6N65E-GE3 Datasheet/PDF |
| Quantity: | 126 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | D-PAK (TO-252AA) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 78W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 820pF @ 100V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 48nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 600 mOhm @ 3A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 7A (Tc) |
| Drain to Source Voltage (Vdss): | 650V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The SIHD6N65E-GE3 is a range of MOSFETs (Metal Oxide Semiconductor Field Effect Transistor) that is used to isolate and switch devices in power conversion and switching applications. This type of MOSFETs is categorized as single as they only contain one gate terminal. Due to its versatility, the SIHD6N65E-GE3 is suitable for many different applications including motor control, switching mode power supply, motor drive, and industrial electronics.
The MOSFETs of the SIHD6N65E-GE3 range are capable of blocking voltages of up to 600V and can handle currents of up to 6A. This makes them well-suited for applications where high voltage and/or current has to be supplied to the load. The low on-resistance of the MOSFETs allows for high efficiency in power conversion circuit designs, as less power is dissipated during the flow of current through the device.
The working principle of the SIHD6N65E-GE3 MOSFETs can be explained as follows. The device consists of two main regions: the source region and the drain region. The source region is always connected to a power supply, while the drain region is connected to the load. To turn the device “on”, a small voltage is applied to the Gate terminal, creating an electric field between the source and drain regions. This electric field creates the flow of current between the two regions, thus allowing power to be supplied to the load. When the Gate voltage is removed, the device turns “off” and the current flow stops. This process can be repeated multiple times to obtain an on/off action for power conversion or switching applications.
In summary, the SIHD6N65E-GE3 is a single MOSFET device suitable for use in power conversion and switching applications. It has a high blocking voltage of 600V, a high current capability of 6A, and a low on-resistance. The working principle involves the application of a small voltage to the Gate terminal, which creates an electric field that allows current to flow between the source and drain regions, thus enabling power to be supplied to the load.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| SIHD5N50D-GE3 | Vishay Silic... | -- | 399 | MOSFET N-CH 500V 5.3A TO2... |
| SIHD6N65E-GE3 | Vishay Silic... | -- | 126 | MOSFET N-CH 650V 7A TO252... |
| SIHD9N60E-GE3 | Vishay Silic... | 0.68 $ | 1000 | MOSFET N-CHANNEL 600V 9A ... |
| SIHD6N62E-GE3 | Vishay Silic... | 1.31 $ | 90 | MOSFET N-CH 620V 6A TO-25... |
| SIHD14N60E-GE3 | Vishay Silic... | 1.83 $ | 114 | MOSFET N-CHANNEL 600V 13A... |
| SIHD2N80E-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 800V 2.8A DPA... |
| SIHD7N60E-GE3 | Vishay Silic... | -- | 1403 | MOSFET N-CH 600V 7A TO-25... |
| SIHD6N62ET1-GE3 | Vishay Silic... | 0.53 $ | 2000 | MOSFET N-CH 620V 6A TO252... |
| SIHD3N50D-GE3 | Vishay Silic... | 0.75 $ | 2720 | MOSFET N-CH 500V 3A TO252... |
| SIHD4N80E-GE3 | Vishay Silic... | 1.41 $ | 3000 | MOSFET N-CHAN 800V FP TO-... |
| SIHD12N50E-GE3 | Vishay Silic... | 1.44 $ | 5455 | MOSFET N-CHAN 500V DPAKN-... |
| SIHD6N80E-GE3 | Vishay Silic... | 1.7 $ | 2998 | MOSFET N-CHAN 800V TO-252... |
| SIHD3N50D-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 500V 3A TO252... |
| SIHD5N50D-E3 | Vishay Silic... | 0.41 $ | 1000 | MOSFET N-CH 500V 5.3A TO2... |
| SIHD7N60E-E3 | Vishay Silic... | 0.71 $ | 1000 | MOSFET N-CH 600V 7A TO-25... |
| SIHD6N65ET1-GE3 | Vishay Silic... | 0.57 $ | 1000 | MOSFET N-CH 650V 7A TO252... |
| SIHD6N65ET4-GE3 | Vishay Silic... | 0.57 $ | 1000 | MOSFET N-CH 650V 7A TO252... |
| SIHD6N65ET5-GE3 | Vishay Silic... | 0.57 $ | 1000 | MOSFET N-CH 650V 7A TO252... |
| SIHD7N60ET4-GE3 | Vishay Silic... | 0.62 $ | 1000 | MOSFET N-CH 600V 7A TO252... |
| SIHD7N60ET5-GE3 | Vishay Silic... | 0.62 $ | 1000 | MOSFET N-CH 600V 7A TO252... |
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