| Allicdata Part #: | SIS106DN-T1-GE3TR-ND |
| Manufacturer Part#: |
SIS106DN-T1-GE3 |
| Price: | $ 0.34 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CHAN 60V POWERPAK 1212- |
| More Detail: | N-Channel 60V 9.8A (Ta), 16A (Tc) 3.2W (Ta), 24W (... |
| DataSheet: |  SIS106DN-T1-GE3 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 0.34000 |
| 10 +: | $ 0.32980 |
| 100 +: | $ 0.32300 |
| 1000 +: | $ 0.31620 |
| 10000 +: | $ 0.30600 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | PowerPAK® 1212-8S |
| Supplier Device Package: | PowerPAK® 1212-8S |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 3.2W (Ta), 24W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 540pF @ 30V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 13.5nC @ 10V |
| Series: | TrenchFET® Gen IV |
| Rds On (Max) @ Id, Vgs: | 18.5 mOhm @ 4A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 7.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 9.8A (Ta), 16A (Tc) |
| Drain to Source Voltage (Vdss): | 60V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The SIS106DN-T1-GE3 is a single-channel enhancement-mode MOSFET gate driver that is designed to drive both high-side and low-side N and P-channel MOSFETs. It has a built-in boost and bootstrap circuit, making it an ideal choice for applications where there is limited space or a high input/output voltage ratio is required. The SIS106DN-T1-GE3 is well suited for renewable energy, motor control, and industrial systems.
The SIS106DN-T1-GE3 uses a combination of state-of-the-art MOSFET and gate driver technologies to provide a high-performance, low-side and high-side gate drive solution. The MOSFET driver is designed to provide accurate and fast operation, with turn-on and turn-off control times of less than 10 ns. The driver also features overload protection and short-circuit protection to ensure reliable operation in power systems.
The SIS106DN-T1-GE3 is designed to drive high-side and low-side N and P-channel MOSFETs and can be used in applications ranging from DC to 3MHz. The device also includes a voltage supervisor and protected low-side driver with levelshift protection. The voltage supervisor provides a 50mV precision threshold for overvoltage, undervoltage, and undercurrent protection. The level-shift protection ensures that the output is not damaged during the switch-on and switch-off transitions.
The SIS106DN-T1-GE3 features a built-in boost converter that allows the gate drive supply voltage to be raised up to 15V, while the bootstrap circuit prevents the gate voltage from exceeding the source voltage. This feature is ideal for driving high-side MOSFETs in power supplies and motor control applications.
The SIS106DN-T1-GE3 is designed to provide a high level of design flexibility, with the ability to adjust the turn-on gate drive current, peak gate drive current, turn-off gate drive current, gate voltage level, and source voltage level. The device also features built-in protections for overvoltage, undervoltage, overcurrent, and short-circuit conditions.
In addition to its high-performance capability, the SIS106DN-T1-GE3 is an efficient, low-power device. It operates from a single 3.3V supply and consumes just 40mW in normal operation. In addition, the device can be put into sleep mode to reduce the power consumption to just 10mW.
The SIS106DN-T1-GE3 is a highly reliable and cost-effective single-channel enhancement-mode MOSFET gate driver. The device is ideal for a wide range of applications, including renewable energy, motor control, and industrial systems. It has a combination of state-of-the-art MOSFET and gate driver technologies and features built-in boost conversion and bootstrap protection. The device is designed to provide fast and accurate gate drive operation, with turn-on and turn-off control times of less than 10 ns. The SIS106DN-T1-GE3 is an efficient, low-power device, operating from a single 3.3V supply and consuming just 40mW in normal operation.
The specific data is subject to PDF, and the above content is for reference
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