| Allicdata Part #: | SIS110DN-T1-GE3TR-ND |
| Manufacturer Part#: |
SIS110DN-T1-GE3 |
| Price: | $ 0.20 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CHAN 100V POWERPAK 1212 |
| More Detail: | N-Channel 100V 5.2A (Ta), 14.2A (Tc) 3.2W (Ta), 24... |
| DataSheet: |  SIS110DN-T1-GE3 Datasheet/PDF |
| Quantity: | 1000 |
| 3000 +: | $ 0.17733 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | PowerPAK® 1212-8 |
| Supplier Device Package: | PowerPAK® 1212-8 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 3.2W (Ta), 24W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 550pF @ 50V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 13nC @ 10V |
| Series: | TrenchFET® Gen IV |
| Rds On (Max) @ Id, Vgs: | 54 mOhm @ 4A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 7.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 5.2A (Ta), 14.2A (Tc) |
| Drain to Source Voltage (Vdss): | 100V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The SIS110DN-T1-GE3 transistor has a wide range of applications, from audio to power management, and a host of other applications. This transistor is a MOSFET device that is a single device with a single gate. It has high switching speed, low on-resistance, and low-power consumption. This makes it ideal for applications that require high-performance, low-power solutions.
The SIS110DN-T1-GE3 is a N channel MOSFET device with an on-resistance of 10 ohms and an off-resistance of 1 ohm. It has a breakdown voltage of 30V, a peak gate-source voltage of 30V, and a maximum drain-source voltage of 30V. It also has a maximum gate current of 3mA and a maximum continuous drain current of 10A.
The SIS110DN-T1-GE3 works by controlling the flow of current through its gate. When the gate voltage is low, the MOSFET is off and no current flows. When the gate voltage is increased, the MOSFET is turned on and current can flow through it. To turn the MOSFET off, the gate voltage must be reduced.
The SIS110DN-T1-GE3 is used in a variety of applications, including power management, sound card circuitry, cell phone and tablet circuitry, embedded systems, and automotive applications. In power management applications, the SIS110DN-T1-GE3 is used to reduce the power consumption of a system by providing precise control of power delivery. In sound card circuitry, the SIS110DN-T1-GE3 is used to control the volume and dynamics of sound signals. In cell phone and tablet circuitry, the SIS110DN-T1-GE3 is used to provide precise power delivery and extended battery life. In embedded systems and automotive applications, the SIS110DN-T1-GE3 is used to provide precise control of signals and power delivery.
The SIS110DN-T1-GE3 is manufactured using advanced MOSFET manufacturing processes, ensuring the highest quality devices. The MOSFET is made from a silicon substrate and is an epitaxial N-type MOSFET device. The SIS110DN-T1-GE3 has a wide variety of features, including a small size, low parasitic capacitances, small gate charge, and low switching losses.
The SIS110DN-T1-GE3 is a single MOSFET device that is suitable for many applications. It has a wide range of features and is manufactured using advanced MOSFET manufacturing processes. It is ideal for applications requiring high performance and low power solutions.
The specific data is subject to PDF, and the above content is for reference
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