| Allicdata Part #: | SIS184DN-T1-GE3TR-ND |
| Manufacturer Part#: |
SIS184DN-T1-GE3 |
| Price: | $ 0.48 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CHAN 60V POWERPAK 1212- |
| More Detail: | N-Channel 60V 17.4A (Ta), 65.3A (Tc) 3.7W (Ta), 52... |
| DataSheet: |  SIS184DN-T1-GE3 Datasheet/PDF |
| Quantity: | 1000 |
| 3000 +: | $ 0.43138 |
| Vgs(th) (Max) @ Id: | 3.4V @ 250µA |
| Package / Case: | PowerPAK® 1212-8S |
| Supplier Device Package: | PowerPAK® 1212-8S |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 3.7W (Ta), 52W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1490pF @ 30V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 32nC @ 10V |
| Series: | TrenchFET® Gen IV |
| Rds On (Max) @ Id, Vgs: | 5.8 mOhm @ 10A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 7.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 17.4A (Ta), 65.3A (Tc) |
| Drain to Source Voltage (Vdss): | 60V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The SIS184DN-T1-GE3 is a product of Silicon Storage Technology (SST). It is a field effect transistor (FET) that is classified as a single MOSFET. A field effect transistor is a type of transistor that uses a voltage applied to a gate to control the flow of electrons through the channels of the transistor. The benefit of this type of transistor is that they are extremely efficient and can operate at very high frequencies.
The SIS184DN-T1-GE3 is designed for use in high speed, low noise analog circuitry. It has an extremely low on-resistance and is capable of switching high frequency signals quickly and efficiently. It also features an extremely low input capacitance and is ideal for low voltage applications. This makes it the perfect choice for high-speed analog circuits that require low-noise operations.
The working principle of the SIS184DN-T1-GE3 is quite simple. When a voltage is applied to the gate of the transistor, it creates a current in the channels of the transistor. This current is called the drain current (Idr). The magnitude of the current is dependent on the voltage applied to the gate. This current will flow through the channels of the transistor and will be used to switch or amplify a signal or a voltage.
The SIS184DN-T1-GE3 is widely used in a variety of applications that require low power, high frequency, and low noise. It can be used in a variety of analog circuits, from power amplifiers to RF filters. It is also used in high-speed clocks and in telecommunications applications. It is also used in low voltage applications as it has a low input capacitance, which makes it ideal for these types of applications.
The SIS184DN-T1-GE3 is an excellent choice for high-speed operations and low-noise operations. It has a low on-resistance and is capable of switching high frequency signals quickly and efficiently. It also has an extremely low input capacitance, which makes it perfect for low voltage applications. Due to its superior performance, it is the ideal choice for high-speed operations and is an excellent choice for analog circuitry.
The specific data is subject to PDF, and the above content is for reference
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