SIS862DN-T1-GE3 Allicdata Electronics
Allicdata Part #:

SIS862DN-T1-GE3TR-ND

Manufacturer Part#:

SIS862DN-T1-GE3

Price: $ 1.08
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 60V 40A 1212N-Channel 60V 40A (Tc) 3.7...
More Detail: N/A
DataSheet: SIS862DN-T1-GE3 datasheetSIS862DN-T1-GE3 Datasheet/PDF
Quantity: 975
1 +: $ 1.08333
10 +: $ 0.93889
100 +: $ 0.75833
1000 +: $ 0.72222
10000 +: $ 0.68611
Stock 975Can Ship Immediately
$ 1.08
Specifications
Series: TrenchFET®
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Power - Max: --
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1320pF @ 30V
FET Feature: --
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® 1212-8
Package / Case: PowerPAK® 1212-8
Base Part Number: --
Description

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SIS862DN-T1-GE3 is an enhancement-mode field-effect transistors (FETs) which consists of a source, drain and gate. It is a type of semiconductor with a composition between that of a metal and an insulator, which can be used to amplify or switch electric signals. The FET's source and drain regions are highly doped ports, while the gate region is lightly doped. The electric field generated by the difference in the electron energy states between the source and drain, known as the inversion layer, can be used to control the current flowing between them. The source and drain regions can either be connected to an analog or digital signal source, depending on the application.

The working principle of SIS862DN-T1-GE3 is based on the concept of electric field control. In the simplest form, it is a three-terminal device used to amplify or switch electrical signals. A voltage applied to the gate modulates the electric field between the source and the drain, controlling the current flow between them. This is the key to the FET's operation and the reason why it is often referred to as a “voltage-controlled device”.

SIS862DN-T1-GE3 is commonly used in applications that require precise current control and high-power capability. It is ideal for motor control, as well as LED and video display applications. It can also be used as a general-purpose switch, such as for AC/DC switching, home automation equipment and solid-state relays. The FET can also be used to interface between digital and analog signals, as they can handle large amounts of power and offer much faster response times than traditional BJTs.

In addition, SIS862DN-T1-GE3 have advanced features such as low on-resistance, which allows them to act as current sources and to dissipate less heat during linear operations. Additionally they have a fast switching time, allowing for excellent control of the output current.

Given its advanced features, SIS862DN-T1-GE3 are suitable for a wide range of applications where precise current and voltage control is required. Its broad range of current and voltage ratings also make it a versatile and efficient choice for many digital and analog control circuits.

The specific data is subject to PDF, and the above content is for reference

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