SIS888DN-T1-GE3

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SIS888DN-T1-GE3 is an insulated-gate bipolar transistor (IGBT) module, a combination of a bipolar junction transistor (BJT) and a power MOS field-effect transistor (MOSFET) , and part of the 500 V IGBT family of chips produced by Shanghai Insulated Gate Bipolar Transistor Co., Ltd. (SIS). It features low on-state and low switching losses. The SIS888DN-T1-GE3 is most suitable for switching applications, where low-voltage operation is a requirement, such as in appliance, motor control, and UPS applications.

This device’s main features include a low VCE(on) of 10 V, a high collector current of 8 A, a low thermal resistance of 30 °C/W, a maximum operating temperature of 125 °C, and a typical on-state forward voltage drop of 2.3 V. It also comes with integrated protection circuits for over-temperature and under-voltage lockout.

The SIS888DN-T1-GE3 is composed of a BJT and power MOSFET combination. This IG-BJT is a combination of an N-channel MOSFET and a PNP bipolar junction transistor (BJT) in the same chip. The MOSFET provides the high current switching necessary for fast turn-on and turn-off, while the BJT provides the low current switching capabilities required in switching applications. When the gate voltage is higher than the threshold voltage of the MOSFET, the MOSFET turns on, thus allowing current to flow from the emitter to the collector.

Aside from its main features, the SIS888DN-T1-GE3 comes with additional features such as its heat-sink, the heat dissipating fins on both sides of the IGBT. This helps to draw the heat away from the chip, avoiding overheating and making it easier to attach a heat sink device.

The SIS888DN-T1-GE3 is a versatile device and can be used for a wide range of applications, from low voltage and high current switching, motor control, and UPS applications. It is one of the most popular and widely used IGBTs in the 500 V IGBT family.

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