SIS892DN-T1-GE3

Vgs(th) (Max) @ Id:	3V @ 250µA
Package / Case:	PowerPAK® 1212-8
Supplier Device Package:	PowerPAK® 1212-8
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	3.7W (Ta), 52W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	611pF @ 50V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	21.5nC @ 10V
Series:	TrenchFET®
Rds On (Max) @ Id, Vgs:	29 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	30A (Tc)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Introduction

The SIS892DN-T1-GE3 is a single, low power, high voltage, MOSFET transistor. It is specifically designed for use in data and telecommunication applications, providing outstanding performance in terms of: robustness, high speed and low power.

Application Field

The SIS892DN-T1-GE3 is perfect for applications where high voltage switching, low power dissipation, and fast switching speeds are needed. This can include large-scale power supplies and motor control, large capacitive load switching, various communication, imaging and sensing systems, and many moreIn low power applications, this MOSFET transistor provides reduced switching times and decreased current requirements, thus leading to improved performance. Additionally, when used to drive loads that do not require continuous current, the SIS892DN-T1-GE3 can reduce overall power losses while extending battery life.

Working Principle

The SIS892DN-T1-GE3\'s operating principle follows the basic structure of most FETs and MOSFETs: a horizontal gate atop a vertical insulated structure which connects a source and drain. When in the off state, a negative charge at the gate creates a depletion region that blocks current flow between the source and drain. When a positive voltage is applied to the gate, the electrons can move freely, allowing current to flow between the source and drain. In the case of the SIS892DN-T1-GE3, this voltage can range from 6 volts (V) to 30V, and the drain-source current can range from 0.8A to 200uA.The SIS892DN-T1-GE3 is also equipped with a reverse breakdown voltage feature. This allows the device to prevent current from flowing from the drain to the source in the absence of a positive voltage on the gate. This is designed to protect against over-current and prevent accidental damage in applications where a negative voltage might be applied to the gate.

Advantages

The SIS892DN-T1-GE3\'s high voltage and low power characteristics provide a number of advantages in many applications. The device\'s reduced voltage drain-source breakdown (Vdss) provides improved protection against damage due to electrostatic discharge (ESD). This makes the SIS892DN-T1-GE3 perfect for use in sensitive environments and applications requiring high levels of ESD protection.In addition, its high level of performance in complex switching and power applications makes it an ideal choice for medical and space-critical applications which require reliable switching and high accuracy. Its high voltage, low power, and fast switching performance also make it a great fit for communication and imaging systems.

Conclusion

In summary, the SIS892DN-T1-GE3 is a powerful and reliable single FET/MOSFET device designed to meet the demands of complex and high current applications. This device offers a wide range of benefits including: high voltage, low power consumption, fast switching speeds, improved protection against ESD, and reliable power delivery. All these features make it suitable for a variety of applications from sophisticated communication systems to medical and space-critical devices.

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