SM6S10AHE3_A/I

Voltage - Clamping (Max) @ Ipp:	17V
Supplier Device Package:	DO-218AB
Package / Case:	DO-218AB
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Capacitance @ Frequency:	--
Applications:	Automotive
Power Line Protection:	No
Power - Peak Pulse:	4600W (4.6kW)
Current - Peak Pulse (10/1000µs):	271A
Series:	Automotive, AEC-Q101, PAR®
Voltage - Breakdown (Min):	11.1V
Voltage - Reverse Standoff (Typ):	10V
Unidirectional Channels:	1
Type:	Zener
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Tape & Reel (TR)

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SM6S10AHE3_A/I is a type of TVS diode which is usually used in transient voltage suppression applications. It is used to protect electronic components from damage caused by surge voltages and is ideal for applications where fast response time is essential. The SM6S10AHE3_A/I offers a wide range of input voltages (up to 1500V), high surge capability (4000 Amps), and low leakage current (hundreds of nano-amps). The SM6S10AHE3_A/I is a low-capacitance, fast turn-on, and low-voltage TVS diode. It is designed for protecting electronic components from electrostatic discharge (ESD) and other transients. It is a monolithic diode with symmetrical bidirectional protection with an rated breakdown voltage of 6.0V using the SM6S10AHE3_A/I part number or 10V using the SM6S10AHE3_I part number. The voltage carrying capacity is 1500V Peak Pulse Power and the triplecrown performance is (10/1000/4000) meaning 10V Breakdown Voltage, 1000W Transient Power, and 4000A Peak Pulse Current. The working principle of TVS diode is based on the principle of transient voltage clamping. When a surge voltage passes through the TVS diode, the diode begins to conduct and limits the voltage rise to a safe level (the clamping voltage). This effectively prevents current flowing through the circuit and protects the associated components from the high surge voltage. In general, the reverse breakdown voltage of the diode is determined by the amount of doping or the amount of impurities present on the semiconductor material. The highly doped junction of the diode creates an electrode junction that is more “conductive” than the junction of a normal diode. This increases the breakdown voltage of the diode, making it suitable for use in transient voltage protection applications. The SM6S10AHE3_A/I diode is also designed for low capacitance, meaning it is capable of conducting current at relatively high frequencies. This reduces the effects of parasitic capacitance on the device, allowing for faster switching and lower levels of heat dissipation. It also has an ultra-low leakage current rating, which is beneficial for applications requiring little to no current flow. In addition to protection from surge voltages, the SM6S10AHE3_A/I diode can also be used to provide protection from electrostatic discharge (ESD). This is achieved by its bidirectional method of protection, which is especially beneficial for protecting sensitive electronic components. In conclusion, the SM6S10AHE3_A/I is an ideal choice for transient voltage suppression applications. It offers high peak pulse current and voltage carrying capacity, low capacitance, and low leakage current. And because of its symmetrical bidirectional protection, it also offers protection from ESD.

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