Allicdata Part #: | SM6S22A-E3/2D-ND |
Manufacturer Part#: |
SM6S22A-E3/2D |
Price: | $ 0.00 |
Product Category: | Circuit Protection |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | TVS DIODE 22V 35.5V DO218AB |
More Detail: | N/A |
DataSheet: | SM6S22A-E3/2D Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
1 +: | 0.00000 |
Current - Peak Pulse (10/1000µs): | 130A |
Base Part Number: | SM6S |
Supplier Device Package: | DO-218AB |
Package / Case: | DO-218AB |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Capacitance @ Frequency: | -- |
Applications: | General Purpose |
Power Line Protection: | No |
Power - Peak Pulse: | 4600W (4.6kW) |
Series: | PAR® |
Voltage - Clamping (Max) @ Ipp: | 35.5V |
Voltage - Breakdown (Min): | 24.4V |
Voltage - Reverse Standoff (Typ): | 22V |
Unidirectional Channels: | 1 |
Type: | Zener |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Obsolete |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
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The SM6S22A-E3/2D is a unidirectional TVS diode, designed to protect electronic circuits from high-voltage, line transients. The device features a low capacitance, low dynamic resistance, and is suitable for use in many consumer electronic devices. The SM6S22A-E3/2D is capable of withstanding repetitive transient events without degradation or latch-up problems. It provides superior clamping capability and excellent protection performance in many transient applications.
The SM6S22A-E3/2D is an ideal choice for protecting RF circuits, data lines, instrumentation, and other circuits from over-voltage transients. It is also suitable for use in harsh environments. The device offers low on-state resistance, high peak-forward surge current capacity, and low self-conduction losses.
The main application fields of the SM6S22A-E3/2D are consumer electronics, automotive, medical, industrial, and aerospace industries. It is used in power supplies, over-voltage protection, and switching devices. The device has been designed to provide superior performance in the presence of high-frequency transients and other over-voltage events.
The working principle of the SM6S22A-E3/2D is based on the principle of avalanche breakdown. When the device is exposed to a high-voltage signal, normally exceeding its breakdown voltage, the device begins to conduct. The forward leakage current is typically very low, and the reverse-voltage protection is typically greater than the rated breakdown voltage. When the transient is over, the device returns to its original state.
The device has several features that make it ideal for many applications. First, the device has a very low device capacitance, which helps to keep the noise level low. Second, the device has a low dynamic resistance, which keeps the current drawn during an event low. Lastly, the device also has a low leakage current, which allows it to be used in many consumer electronics devices.
In summary, the SM6S22A-E3/2D is an excellent choice for transient protection applications. It offers superior protection performance in the presence of intense transients and other over-voltage events. The low capacitance and low dynamic resistance make it an ideal choice for a variety of applications. The device is suitable for use in a wide variety of industries, including consumer electronics, automotive, medical, industrial, and aerospace. The device also has the added benefit of having a low leakage current, ensuring efficient protection performance.
The specific data is subject to PDF, and the above content is for reference
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SM6S24AHE3J_A/I | Vishay Semic... | 1.1 $ | 1000 | TVS DIODE 24V 38.9V DO218... |
SM6S10A-E3/2D | Vishay Semic... | 0.0 $ | 1000 | TVS DIODE 10V 17V DO218AB |
SM6S10AHE3/2D | Vishay Semic... | -- | 1000 | TVS DIODE 10V 17V DO218AB |
SM6S11AHE3/2D | Vishay Semic... | 0.0 $ | 1000 | TVS DIODE 11V 18.2V DO218... |
SM6S12A-E3/2D | Vishay Semic... | 0.0 $ | 1000 | TVS DIODE 12V 19.9V DO218... |
SM6S12AHE3/2D | Vishay Semic... | 0.0 $ | 1000 | TVS DIODE 12V 19.9V DO218... |
SM6S13AHE3/2D | Vishay Semic... | 0.0 $ | 1000 | TVS DIODE 13V 21.5V DO218... |
SM6S14A-E3/2D | Vishay Semic... | 0.0 $ | 1000 | TVS DIODE 14V 23.2V DO218... |
SM6S14AHE3/2D | Vishay Semic... | 0.0 $ | 1000 | TVS DIODE 14V 23.2V DO218... |
SM6S15-E3/2D | Vishay Semic... | 0.0 $ | 1000 | TVS DIODE 15V 26.9V DO218... |
SM6S15A-E3/2D | Vishay Semic... | 0.0 $ | 1000 | TVS DIODE 15V 24.4V DO218... |
SM6S15AHE3/2D | Vishay Semic... | 0.0 $ | 1000 | TVS DIODE 15V 24.4V DO218... |
SM6S15HE3/2D | Vishay Semic... | 0.0 $ | 1000 | TVS DIODE 15V 26.9V DO218... |
SM6S16A-E3/2D | Vishay Semic... | 0.0 $ | 1000 | TVS DIODE 16V 26V DO218AB |
SM6S16AHE3/2D | Vishay Semic... | 0.0 $ | 1000 | TVS DIODE 16V 26V DO218AB |
SM6S17A-E3/2D | Vishay Semic... | 0.0 $ | 1000 | TVS DIODE 17V 27.6V DO218... |
SM6S17AHE3/2D | Vishay Semic... | 0.0 $ | 1000 | TVS DIODE 17V 27.6V DO218... |
SM6S18AHE3/2D | Vishay Semic... | 0.0 $ | 1000 | TVS DIODE 18V 29.2V DO218... |
SM6S20-E3/2D | Vishay Semic... | 0.0 $ | 1000 | TVS DIODE 20V 35.8V DO218... |
SM6S20A-E3/2D | Vishay Semic... | 0.0 $ | 1000 | TVS DIODE 20V 32.4V DO218... |
SM6S20AHE3/2D | Vishay Semic... | -- | 1000 | TVS DIODE 20V 32.4V DO218... |
SM6S20HE3/2D | Vishay Semic... | 0.0 $ | 1000 | TVS DIODE 20V 35.8V DO218... |
SM6S22-E3/2D | Vishay Semic... | 0.0 $ | 1000 | TVS DIODE 22V 39.4V DO218... |
SM6S22A-E3/2D | Vishay Semic... | 0.0 $ | 1000 | TVS DIODE 22V 35.5V DO218... |
SM6S22AHE3/2D | Vishay Semic... | 0.0 $ | 1000 | TVS DIODE 22V 35.5V DO218... |
SM6S22HE3/2D | Vishay Semic... | 0.0 $ | 1000 | TVS DIODE 22V 39.4V DO218... |
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SM6S26A-E3/2D | Vishay Semic... | 0.0 $ | 1000 | TVS DIODE 26V 42.1V DO218... |
SM6S26AHE3/2D | Vishay Semic... | -- | 1000 | TVS DIODE 26V 42.1V DO218... |
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