
SM6S26AHE3_A/I Circuit Protection |
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Allicdata Part #: | SM6S26AHE3_A/I-ND |
Manufacturer Part#: |
SM6S26AHE3_A/I |
Price: | $ 1.56 |
Product Category: | Circuit Protection |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | TVS DIODE 26V 42.1V DO218AB |
More Detail: | N/A |
DataSheet: | ![]() |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
750 +: | $ 1.42049 |
Voltage - Clamping (Max) @ Ipp: | 42.1V |
Supplier Device Package: | DO-218AB |
Package / Case: | DO-218AB |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Capacitance @ Frequency: | -- |
Applications: | Automotive |
Power Line Protection: | No |
Power - Peak Pulse: | 4600W (4.6kW) |
Current - Peak Pulse (10/1000µs): | 109A |
Series: | Automotive, AEC-Q101, PAR® |
Voltage - Breakdown (Min): | 28.9V |
Voltage - Reverse Standoff (Typ): | 26V |
Unidirectional Channels: | 1 |
Type: | Zener |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
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SM6S26AHE3_A/I TVS - Diodes
The SM6S26AHE3_A/I TVS-diodes are used for various electronic components, mainly to protect them against voltage and current surges. They provide a reliable solution to protect electronic components and devices from current overvoltage that may occur in the transient processing of voltage impulses, such as switching operations.
The SM6S26AHE3_A/I is designed for bidirectional overvoltage protection and is capable of working up to 2P8V peak pulse voltage, depending on the specific device configuration. This type of device has a high power rating of 2.5A, and is also very suitable for high-frequency noise suppression. It is designed for surface mounting on printed circuit boards and is also suitable for applications in power supply and communication lines.
Application field
The SM6S26AHE3_A/I TVS-diodes can be found in a variety of industries and applications, including consumer electronics, automotive, industrial control, IT, networks, and various other electronic applications. The device features a very low capacitance, which is important for applications in communication and data systems.
The device is especially suitable for protecting IC\'s and other integrated circuits from overvoltage in low power AC/DC applications where the working voltage range is not higher than 5V, including AC/DC switching for general consumer electronics. It is also valuable for power supply and signal transmission lines where high power pulses occur due to switching or other factors.
Working Principle
The SM6S26AHE3_A/I TVS-diodes are designed to operate in peak power voltaic and Av protector, as well as quasi-bidirectional mode, and have a low capacitance of only 4pF. It features a stepped clamping voltage power rating of up to 2.5A with a maximum peak voltage of 8V and a fast response time of 10ns. The device is designed such that it can clamp the voltage within 10 or 16ns in order to provide maximum protection against overvoltage.
In order to understand how it works, let’s start with an explicative example. Consider an oscilloscope which has its supply voltage over time going up and down. This type of overvoltage can cause damage to the components, so we need a protection device. The SM6S26AHE3_A/I TVS-diode can be connected to the filter on the input side of the oscilloscope to prevent overvoltage. The TVS clamping voltage will then ensure the supply voltage is maintained within the safe operating range.
The TVS has an equivalent electrical circuit composed of a unidirectional trigger diode, a series resistor, and a varistor. The trigger diode starts conducting when the voltage reaches the breakdown voltage, which corresponds to the minimum voltage allowed (or when the current through the diode exceeds the maximum current allowed). The series resistor discharges the circuit when the voltage drops to the off voltage. The varistor absorbs the lower voltages and keeps the circuit in the protected state.
The device is based on the principle of the electrostatic induction effect which creates an electric field when an alternating current (AC) is applied at a specified frequency. The electric field generated in the device induces a significant amount of charge which exposes the device to an overvoltage. The devices can be used in a variety of components and devices for protection against overvoltage.
Conclusion
The SM6S26AHE3_A/I TVS-diodes have a highly reliable protection capability due to their fast response time and low capacitance. They are designed to be used in a wide variety of applications such as overvoltage protection of IC\'s in high frequency current applications, data transmission systems, and power lines. As such, the SM6S26AHE3_A/I is a suitable choice for those in need of a reliable overvoltage protection.
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SM6S22A-E3/2D | Vishay Semic... | 0.0 $ | 1000 | TVS DIODE 22V 35.5V DO218... |
SM6S33AHE3/2D | Vishay Semic... | 0.0 $ | 1000 | TVS DIODE 33V 53.3V DO218... |
SM6S22-E3/2D | Vishay Semic... | 0.0 $ | 1000 | TVS DIODE 22V 39.4V DO218... |
SM6S28AHE3/2D | Vishay Semic... | 0.0 $ | 1000 | TVS DIODE 28V 45.4V DO218... |
SM6S33HE3/2D | Vishay Semic... | 0.0 $ | 1000 | TVS DIODE 33V 59V DO218AB |
SM6S33A-E3/2D | Vishay Semic... | 0.0 $ | 1000 | TVS DIODE 33V 53.3V DO218... |
SM6S28A-E3/2D | Vishay Semic... | 0.0 $ | 1000 | TVS DIODE 28V 45.4V DO218... |
SM6S15ATHE3/I | Vishay Semic... | 0.85 $ | 1000 | TVS DIODE 15V 24.4V DO218... |
SM6S20-E3/2D | Vishay Semic... | 0.0 $ | 1000 | TVS DIODE 20V 35.8V DO218... |
SM6S24AHE3/2D | Vishay Semic... | -- | 1000 | TVS DIODE 24V 38.9V DO218... |
SQF-SM6S2-2G-S9C | Advantech Co... | 31.93 $ | 1000 | SSD 2GB SLC M.2 SATAIII 3... |
SQF-SM6S4-64G-S9C | Advantech Co... | 497.43 $ | 1000 | SSD 64GB SLC M.2 SATAIII ... |
SM6S10ATHE3/I | Vishay Semic... | 0.85 $ | 1000 | TVS DIODE 10V 17V DO218AC |
SM6S11ATHE3/I | Vishay Semic... | 0.85 $ | 1000 | TVS DIODE 11V 18.2V DO218... |
SM6S16A-E3/2D | Vishay Semic... | 0.0 $ | 1000 | TVS DIODE 16V 26V DO218AB |
SM6S20HE3/2D | Vishay Semic... | 0.0 $ | 1000 | TVS DIODE 20V 35.8V DO218... |
SM6S24A-E3/2D | Vishay Semic... | 0.0 $ | 1000 | TVS DIODE 24V 38.9V DO218... |
SM6S10AHE3_A/I | Vishay Semic... | 1.56 $ | 1000 | TVS DIODE 10V 17V DO218AB |
SM6S20A-E3/2D | Vishay Semic... | 0.0 $ | 1000 | TVS DIODE 20V 32.4V DO218... |
SM6S28ATHE3/I | Vishay Semic... | 0.85 $ | 1000 | TVS DIODE 28V 45.4V DO218... |
SM6S36AHE3/2D | Vishay Semic... | 0.0 $ | 1000 | TVS DIODE 36V 58.1V DO218... |
SM6S14ATHE3/I | Vishay Semic... | 0.85 $ | 1000 | TVS DIODE 14V 23.2V DO218... |
SM6S33ATHE3/I | Vishay Semic... | 0.85 $ | 1000 | TVS DIODE 33V 53.3V DO218... |
SM6S14A-E3/2D | Vishay Semic... | 0.0 $ | 1000 | TVS DIODE 14V 23.2V DO218... |
SM6S22AHE3_A/I | Vishay Semic... | 1.56 $ | 1000 | TVS DIODE 22V 35.5V DO218... |
SQF-SM6S1-1G-S9E | Advantech Co... | 28.07 $ | 1000 | SSD 1GB SLC M.2 SATAIII 3... |
SQF-SM6S4-64G-S9E | Advantech Co... | 577.76 $ | 1000 | SSD 64GB SLC M.2 SATAIII ... |
SM6S20ATHE3/I | Vishay Semic... | -- | 1000 | TVS DIODE 20V 32.4V DO218... |
SM6S17ATHE3/I | Vishay Semic... | 0.85 $ | 1000 | TVS DIODE 17V 27.6V DO218... |
SM6S16AHE3_A/I | Vishay Semic... | 1.56 $ | 1000 | TVS DIODE 16V 26V DO218AB |
SM6S26ATHE3/I | Vishay Semic... | 0.85 $ | 1000 | TVS DIODE 26V 42.1V DO218... |
SM6S26AHE3_A/I | Vishay Semic... | 1.56 $ | 1000 | TVS DIODE 26V 42.1V DO218... |
SM6S11AHE3/2D | Vishay Semic... | 0.0 $ | 1000 | TVS DIODE 11V 18.2V DO218... |
SM6S12AHE3/2D | Vishay Semic... | 0.0 $ | 1000 | TVS DIODE 12V 19.9V DO218... |
SM6S36A-E3/2D | Vishay Semic... | 0.0 $ | 1000 | TVS DIODE 36V 58.1V DO218... |
SM6S30A-E3/2D | Vishay Semic... | 0.0 $ | 1000 | TVS DIODE 30V 48.4V DO218... |
SM6S13ATHE3/I | Vishay Semic... | 0.85 $ | 1000 | TVS DIODE 13V 21.5V DO218... |
SQF-SM6S1-1G-S9C | Advantech Co... | 23.23 $ | 1000 | SSD 1GB SLC M.2 SATAIII 3... |
SM6S22HE3/2D | Vishay Semic... | 0.0 $ | 1000 | TVS DIODE 22V 39.4V DO218... |
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