SM6S11ATHE3/I Circuit Protection

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

TVS diodes contain transien voltage suppressors which are semiconductor devices that are specifically designed to protect against electrical transients, often called "electrical surges". The SM6S11ATHE3/I is an ultra-small glas passivated ESD protection diode, designed for use in RF/microwave and analog applications. This device is industry standard for ultra-low capacitance matching and multi-frequency ESD protection applications and offers superior performance characteristics

The SM6S11ATHE3/I provides excellent protection against electrical transients due to its high peak pulse current rating and low on-state resistance. The device has an ultra-low capacitance of 0.8 pF, and offers superior DC blocking characteristics with an operating voltage range up to 20 VDC. The SM6S11ATHE3/I is available with many optional features, such as reverse-biased resistance, capacitance, current- and temperature-compensated breakdown voltage, and reverse recovery current.

The application field of the SM6S11ATHE3/I covers numerous applications such as mobile phones, portable communications, consumer electronics, automotive electronics, and industrial applications. Thanks to its very low capacitance, the SM6S11ATHE3/I is also suitable for RF/microwave applications, where peak to peak transient currents must be minimized.

The working principle of the SM6S11ATHE3/I is based on a diode structure consisting of a pn junction. The diode disconnects the input circuit from the output whenever its reverse breakdown voltage is exceeded. This prevents any current from flowing from the input to the output, thus protecting the circuit against electrical transients. The SM6S11ATHE3/I is designed to limit the surge current, yet not interrupt the normal current flow.

The SM6S11ATHE3/I also offers excellent surge suppression capabilities due to its two-stage protection process. In the first stage, the device responds to a surge voltage quickly and absorbs the surge energy. In the second stage, the device\'s capacitance absorbs the remaining energy, thus limiting peak current levels. This two-stage protection process ensures that the device responds quickly to large surges while still providing stable long-term protection.

In addition to providing ESD protection, the SM6S11ATHE3/I also features low junction capacitance, reverse recovery current, and reverse-biased junction resistance. The device offers high reliability and offers very low leakage current even under high temperature conditions. The SM6S11ATHE3/I also has excellent temperature compensation characteristics and is highly stable over time.

The SM6S11ATHE3/I is a reliable and cost-effective solution for a wide range of ESD protection applications. This device is extremely versatile and provides excellent performance and reliability. With its industry-standard performance characteristics, the SM6S11ATHE3/I is an ideal solution for RF/microwave and analog applications. Thanks to its two-stage protection process, the device offers superior protection against electrical transients and offers excellent stability and reliability over time.

The specific data is subject to PDF, and the above content is for reference