SN7002N E6327

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The SN7002N E6327 is a single MOSFET (metal-oxide-semiconductor field-effect transistor) developed by GateField, a semiconductor manufacturing firm. It is the flagship product of GateField\'s suite of high-performance, low-power MOSFETs for mobile applications, such as smartphones and wearables. This article will discuss the SN7002N E6327\'s application field and working principle.

Application Field

The SN7002N E6327 is primarily intended for use in a range of power delivery, switching, and level-shifting applications. It is designed to operate in the 0V to 20V voltage range, which makes it well-suited for use in smartphones, wearable devices, and other consumer electronics. Its low on-resistance combined with its wide operating voltage range makes it ideal for a variety of battery-powered applications, including power management and redistribution in small form-factor electronics. It is also highly tolerant of layout mismatches, which makes it an excellent solution for applications where flexibility and scalability are paramount.

Working Principle

The SN7002N E6327 is built on a MOSFET structure, allowing it to be used as a voltage-controlled switch. The MOSFET structure consists of a gate, drain and source. A positive voltage is applied to the gate, creating an electric field that controls the flow of current between the drain and source. This allows the MOSFET to be used as a switch, turning on and off with just a slight change in voltage. The SN7002N E6327 is designed to have a fixed “on-resistance,” which is the resistance it has when it is in its “on” state. The on-resistance directly affects the power handling ability of the device, so having a device with a low on-resistance is important for power delivery and switching applications.

Summary

The SN7002N E6327 is a single MOSFET developed by GateField for applications requiring high efficiency and low power consumption. Primarily intended for use in power delivery, switching, and level-shifting applications, it is designed to operate in a 0V to 20V voltage range and offers low on-resistance for excellent power handling. The MOSFET structure consists of a gate, drain, and source, with current being controlled by an electric field created when a positive voltage is applied to the gate. This makes it simple to control the flow of current with just a slight change in voltage. The SN7002N E6327 is well-suited for use in a variety of battery-powered applications, making it a great choice for low-power, mobile electronics.

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