SN7002NL6433HTMA1

Vgs(th) (Max) @ Id:	1.8V @ 26µA
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	360mW (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	45pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	1.5nC @ 10V
Series:	SIPMOS®
Rds On (Max) @ Id, Vgs:	5 Ohm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	200mA (Ta)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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The SN7002NL6433HTMA1 is a single-channel MOSFET intelligently designed to deliver maximum power handling and wide compatibility with various types of power management applications. Its compact design makes it ideal for use in confined and hard-to-cool electronic installations. This MOSFET is suitable for both industrial and commercial applications.

The SN7002NL6433HTMA1 is a discreet transistor made from silicon-based materials with a diellych gate structure that has many useful properties. The gate structure is specifically designed to be very flexible and can be tailored to fit unique system requirements by changing its impedance and capacitance values. It contains a single high-energy electrode and a N-type ground for improved current handling and superior power performance.

The SN7002NL6433HTMA1 is a single-channel MOSFET intelligently designed to handle maximum power loads and perform with high efficiency in a variety of power management applications. Its key features include a wide working frequency range, excellent protection against surges and high temperature, low gate capacitance, high breakdown voltage, and low on-resistance. These features enable the SN7002NL6433HTMA1 to deliver optimum power handling and surge protection in a variety of applications.

The SN7002NL6433HTMA1 is designed to work as a voltage-mode driving MOSFET. As opposed to a current-mode driver, the voltage-mode driver does not require any external capacitors for controlling the gate voltage. This makes the SN7002NL6433HTMA1 particularly suitable for applications in which the gate voltage must be adjusted quickly and accurately.

The SN7002NL6433HTMA1 is ideal for applications in industries such as consumer electronics, automotive, audio, medical, and telecoms. Some of the applications in which it is commonly used include power supply, battery protection, and voltage regulation. The SN7002NL6433HTMA1 is also suitable for use in automotive audio systems, HID lighting and vehicle battery charging, as well as USB charging.

The SN7002NL6433HTMA1 offers a high level of reliability, robustness and safety, making it an ideal choice for harsh industrial environments. Additionally, its integrated protection mechanism and advanced drain-source thin-oxide field-plate technology offer increased safety and protection against electrical and magnetic interference.

In general, the SN7002NL6433HTMA1 is a high-performance, high-efficiency MOSFET that is well-suited for a wide range of power management applications. Its features and design make it a particularly good choice for a variety of industrial, commercial, and consumer applications, offering reliable power handling and surge protection.

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