Allicdata Part #: | SN7002NE6433-ND |
Manufacturer Part#: |
SN7002N E6433 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 60V 200MA SOT-23 |
More Detail: | N-Channel 60V 200mA (Ta) 360mW (Ta) Surface Mount ... |
DataSheet: | SN7002N E6433 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Vgs(th) (Max) @ Id: | 1.8V @ 26µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 360mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 45pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 1.5nC @ 10V |
Series: | SIPMOS® |
Rds On (Max) @ Id, Vgs: | 5 Ohm @ 500mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 200mA (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
Description
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SN7002N E6433 is a type of field effect transistor (FET) commonly used in switching and voltage regulation applications. It is a single-die, high-speed, low-resistance power MOSFET with a maximum drain-source voltage of 700V. It is used in a wide range of applications, including power supplies, battery charging systems, motor control systems, and high-voltage switching applications.The SN7002N E6433 has four terminals – gate, source, drain, and body. The gate terminal is responsible for controlling the operation of the device. When a positive voltage is applied to the gate terminal, current flows from the drain to the source. This is referred to as the “on” state. When a negative voltage is applied to the gate terminal, the device turns “off” and current does not flow.The source terminal of the SN7002N E6433 is connected to ground and the drain is connected to the power supply. The body terminal connects to the substrate, which is usually made of silicon. The substrate acts as a gate for controlling the current flow in the device.The SN7002N E6433 is a scaled down version of a power MOSFET and is used in many applications where a large amount of power is not required. The device is commonly used in low-power switching circuits such as time delay switch ON/OFF controllers, lighting dimmers and motor speed controllers. It is also used in some radio frequency (RF) applications and robotics.The SN7002N E6433 has several advantages over other types of power FETs. It is a relatively low cost device and has a very low resistance. This makes it ideal for switching applications where a high current is not required.The SN7002N E6433 also has very low gate-source capacitance, which makes it suitable for high-frequency switching applications. The device has an excellent thermal stability and operations temperature range. This makes it an ideal choice for applications requiring high-temperature operation.In conclusion, the SN7002N E6433 is a type of single-die power FET used in a wide range of applications. It has a low resistance, low capacitance, and excellent thermal stability and operation temperature range, making it suitable for high-frequency switching and low-power switching applications.
The specific data is subject to PDF, and the above content is for reference
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