
Allicdata Part #: | SPB70N10L-ND |
Manufacturer Part#: |
SPB70N10L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 100V 70A D2PAK |
More Detail: | N-Channel 100V 70A (Tc) 250W (Tc) Surface Mount PG... |
DataSheet: | ![]() |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2V @ 2mA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | PG-TO263-3-2 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 250W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4540pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 240nC @ 10V |
Series: | SIPMOS® |
Rds On (Max) @ Id, Vgs: | 16 mOhm @ 50A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 70A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The SPB70N10L is a N-Channel MOSFET type of transistor, that features a low on-resistance of only 70Ω. It is suitable for high power applications, in particular those related to switching applications, where a fast and efficient power transfer is desired. This MOSFET allows the user to switch power efficiently and with minimal losses at frequencies up to 100MHz, and it has a maximum drain-source voltage of 100V.
The SPB70N10L is intended to replace equivalent BJT transistors in many applications due to its advantages in terms of load efficiency and power handling capacity. This MOSFET has a much greater load efficiency than BJTs, and this increases when the gate capacitance is increased. Furthermore, the design of this MOSFET reduces the need for output current tracks through improved circuit designs. This MOSFET also has a wider temperature operating range, which further increases its ability to handle large currents.
The application fields for the SPB70N10L are those related to power-controlled devices, such as high powered motors, servos, and similar equipment. This MOSFET is also useful in audio applications, as its low on-resistance and low current characteristics make it well suited for switching signals at very high speeds. In short, this MOSFET can be used to switch power faster and more efficiently than traditional BJTs, and its features also allow it to be used in a variety of audio applications.
The working principle of the SPB70N10L is that, when a small electrical current is applied to the gate, the MOSFET will switch on and allow a larger current to flow through the drain. Consequently, the voltage on the drain will rise, and the device can then be used to switch large power signals. Similarly, when the gate voltage is removed, the MOSFET will switch off and the drain voltage will return to the normal level. This switching action is fast and efficient, as the on-resistance of the MOSFET is very low, and the device is able to switch power quickly and efficiently.
The SPB70N10L is a powerful and reliable MOSFET transistor, and it is ideal for a wide range of power and audio applications. The low on-resistance and wide temperature operating range make it ideal for switching large amounts of power with minimal losses, and it is also well suited for fast switching applications. In addition, its design allows for the efficient transfer of power, and the replacement of equivalent BJTs in many applications.
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