SPB77N06S2-12

Vgs(th) (Max) @ Id:	4V @ 93µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	PG-TO263-3-2
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	158W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2350pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	60nC @ 10V
Series:	OptiMOS™
Rds On (Max) @ Id, Vgs:	12 mOhm @ 38A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	80A (Tc)
Drain to Source Voltage (Vdss):	55V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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Introduction to SPB77N06S2-12

The SPB77N06S2-12, also known as N-Channel Mosfet (Dual P-channel enhancement mode vertical DMOS FET), is a voltage-controlled semiconductor device that was developed by STMicroelectronics. It works much like a normal field-effect transistor (FET), but is much more efficient and reliable. The N-Channel Mosfet is designed to be very efficient in controlling electricity, allowing the current to flow and cut off with great precision. This makes the SPB77N06S2-12 an essential electronic component for both digital and analogue circuits.

Application Field of SPB77N06S2-12

The SPB77N06S2-12 is mainly used as an enhancement-mode field-effect transistor (FET) in a variety of analog and digital circuits. It is a highly integrated Power MOSFET which offers a simple and easy solution to control the power in high frequency applications like automotive cooling and LED lighting. This device also provides excellent noise reduction, power solutions and overall power efficiency.In addition, the SPB77N06S2-12 can also be used in motor control applications such as stepper motors, BLDC motors, and brushed DC motors. Moreover, due to its excellent high current carrying capacity, the voltage controlled FET can also be used in power amplification and switching applications. It can be used in applications that require fast-switching of high-power loads, as well as in any other application where control of large power signals is required.

Working Principle of SPB77N06S2-12

The SPB77N06S2-12 works much like a regular Field-Effect Transistor (FET). It is a voltage-controlled semiconductor that basically acts as a gate for electrical current, allowing it to pass when triggered. The N-Channel Mosfet can be triggered using two methods: via a voltage or via a current. When the voltage is applied to the gate of the FET, it helps create a channel between the drain and the source, which in turn allows the current to pass through the FET. Similarly, when current is applied to the gate of the FET, it creates a channel between the drain and the source, which in turn allows the current to pass through the FET. In a nutshell, the SPB77N06S2-12 acts as a switch, allowing the flow of current through the source, drain and channel when triggered. It is capable of both acting like an open circuit and acting like a short circuit, which is why it is often used in power applications. The SPB77N06S2-12 is capable of blocking off or allowing the flow of electricity at very high currents.

Conclusion

In conclusion, the SPB77N06S2-12 is a voltage-controlled N-Channel MOSFET which is designed to provide efficient and reliable power solutions for a variety of analog and digital circuits. It is capable of blocking off or allowing the flow of electricity at very high currents, which makes it an essential electronic component for power amplification and switching applications. It can also be used for applications such as motor control and LED lighting. Overall, the SPB77N06S2-12 is a reliable and highly efficient electronic component for digital and analog circuits.

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