
Allicdata Part #: | SPB73N03S2L08INTR-ND |
Manufacturer Part#: |
SPB73N03S2L-08 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 30V 73A D2PAK |
More Detail: | N-Channel 30V 73A (Tc) 107W (Tc) Surface Mount PG-... |
DataSheet: | ![]() |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2V @ 55µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | PG-TO263-3-2 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 107W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1710pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 46.2nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 8.1 mOhm @ 36A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 73A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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SPB73N03S2L-08 is known as single enhancement-mode (normally-off) field effect transistor (FET), optimized for high speed power switching applications. It is designed using advanced high voltage MOSFET technology to achieve ruggedized device design. It is one of the most popular transistors available in the market due to its low RDS(on), fast switching features, low capacitance and wide voltage ranges.
The SPB73N03S2L-08 has a wide range of application fields. It can be used for switch mode power supplies (SMPSs) and DC-DC converters in telecom and industrial applications such as cellphone chargers, notebook computers, server systems and embedded systems. Additionally, it can be applied in motor control, UPS and many power management systems.
The device can also be used in ideal diode circuits where it functions as a power bridge rectifier. The drain-source voltage (VDS) is specified up to 800V and can work up to 175 degrees Celsius junction temperature. The on-resistance of this transistor is very low (e.g. at 4V gate voltage is 2.25 Ω). This makes it very suitable for a power switching application.
The working principle behind the SPB73N03S2L-08 is simple. When a low gate-source voltage is applied, an electric field is created between the source and gate leads, so as to create a breakdown of the drain-source depletion region, thus allowing high current flow from the source terminal to the drain terminal. By controlling the gate voltage, the drain current can be modulated in order to switch the power devices on and off. The low on-resistance of this transistor makes it suitable for high-speed switching applications where long switching times would have a detrimental impact on system efficiency.
Thus, with its wide range of application fields, low on-resistance, fast switching features and wide voltage range, the SPB73N03S2L-08 can be highly beneficial for variety of different applications. It significantly improves system power usage and switching times, allowing for improved efficiency and faster operation.
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