Allicdata Part #: | SPD18P06PGBTMA1TR-ND |
Manufacturer Part#: |
SPD18P06PGBTMA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET P-CH 60V 18.6A TO252-3 |
More Detail: | P-Channel 60V 18.6A (Tc) 80W (Tc) Surface Mount PG... |
DataSheet: | SPD18P06PGBTMA1 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | PG-TO252-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 80W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 860pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 33nC @ 10V |
Series: | SIPMOS® |
Rds On (Max) @ Id, Vgs: | 130 mOhm @ 13.2A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 18.6A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SPD18P06PGBTMA1 is a transistor operating as an enhancement mode MOSFET, commonly found in power management applications. This N-Channel MOSFET enables designers to develop more efficient and reliable power solutions for their application. The working principle of the SPD18P06PGBTMA1 is based on the flow of electrons through the gate-source junction when a voltage is applied.
The SPD18P06PGBTMA1 is composed of four terminals. The drain is the source of current through the transistor, while the source is the end of the current flow. The gate is the control terminal, while the body is the connecting point between the drain and source. By adjusting the voltage applied to the gate, the voltage across the drain-source can be controlled and the current flowing through the device can be regulated.
Due to its low on-resistance and high power dissipation capabilities, the SPD18P06PGBTMA1 is capable of carrying large amounts of power with low losses. It is often used in high efficiency power supplies, where the need for low component losses and the ability to switch large currents is required. The pre-biased start-up voltage of the SPD18P06PGBTMA1 makes it particularly suitable for use in DC-DC converters and low-power power supply applications.
The high switching frequencies and fast response times associated with the SPD18P06PGBTMA1 also make it suitable for use in power converters switching at high frequencies, such as in high-frequency DC-DC converters. Its low gate-source capacitance also makes it suitable for use in higher speed switching applications, while its low gate charge makes it an ideal device for applications where low power consumption is important.
The SPD18P06PGBTMA1 also has a wide temperature range, making it suitable for use in systems with varying operating temperatures. Its high power and thermal performance also make it a suitable device for use in harsh environments. Its robust construction makes it resistant to mechanical vibrations and shock and helps to reduce additional costs in mechanical design.
The SPD18P06PGBTMA1 is often used in a wide array of consumer and industrial applications, including but not limited to: telecommunications, motor control, lighting, power conversion, motor drives, HVAC and renewable energy systems. Its wide temperature range, low losses and robust construction make it an ideal part for operation in a variety of environments.
The specific data is subject to PDF, and the above content is for reference
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