Allicdata Part #: | SPI07N60C3XKSA1-ND |
Manufacturer Part#: |
SPI07N60C3XKSA1 |
Price: | $ 1.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 600V 7.3A TO-262 |
More Detail: | N-Channel 600V 7.3A (Tc) 83W (Tc) Through Hole PG-... |
DataSheet: | SPI07N60C3XKSA1 Datasheet/PDF |
Quantity: | 1000 |
500 +: | $ 0.95357 |
Vgs(th) (Max) @ Id: | 3.9V @ 350µA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | PG-TO262-3-1 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 83W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 790pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 27nC @ 10V |
Series: | CoolMOS™ |
Rds On (Max) @ Id, Vgs: | 600 mOhm @ 4.6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 7.3A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Not For New Designs |
Packaging: | Tube |
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The SPI07N60C3XKSA1 is an N-channel Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) manufactured by Infineon. This discrete transistor is part of a family of ultra-high-speed, low-on-resistance MOSFETs that can offer improved performance and power savings for a variety of applications.
The SPI07N60C3XKSA1 is specifically designed for applications requiring low on-resistance, high-speed switching, and low gate-capacitance. It is ideal for high-efficiency power supplies as well as general-purpose power MOSFET applications requiring high operating speed and low on-resistance. The device is also suitable for driving high-frequency switching or digital signal switches. It has an operating temperature range of -55 to 175 degrees Celsius.
The SPI07N60C3XKSA1 is a logic-level-capable device, meaning that it can be controlled directly by logic signals from a CMOS or TTL driver. This feature makes it a great choice for applications that require low power dissipation as well as improved efficiency. The device has a drain-to-source breakdown voltage of 600V, drain-source on-resistance of 8.8 mΩ, and maximum current rating of 30 A.
The working principle for the SPI07N60C3XKSA1 is essentially the same as for other MOSFETs. When the gate voltage is raised above the threshold voltage, the transistor turns on and current flows between the source and drain. As the current increases, the voltage drop across the on-resistance also increases, and the device begins to dissipate power. As the gate voltage is further increased, the channel conductivity increases, resulting in an increase in current and an associated increase in power dissipation.
The SPI07N60C3XKSA1 is a useful device for applications such as driving high-side switching and power conversion circuits, DC-DC converters, and motor drivers. It can also be used in switching or digital signal switching applications. Moreover, the device’s low on-resistance, high-speed switching, and low gate-capacitance make it well-suited for applications that require minimum power losses. The device is reliable, cost-effective, and easy to use, making it a great choice for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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