SPI08N80C3

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The SPI08N80C3 is a N-channel MOSFET that is widely used in electric and power electronics applications, such as amplifier circuitry or high-voltage switching. This type of transistor is able to hold large electric current and is able to handle large electric power, which makes it a popular choice for energy-intensive applications. This article will discuss the application field, features, and working principle of the SPI08N80C3.

Application Field and Features

The SPI08N80C3 is equipped with strong resistance in order to protect from overvoltage and current. It is ideal to be used in high-frequency power converters, motor controls and medium-voltage DC-DC converters. Its insulation gate voltage and drain-to-source voltage are quoted at 800V and 800V respectively, which makes it suitable for applications with high voltage distinction. The SPI08N80C3 is designed to be a low power consumption structure which will have less influence on the temperature of its surroundings. Its continuous drain current and total power dissipation are rated at 6A and 25W, enabling it to support various kinds of circuits while consuming little power.

Working Principle

The SPI08N80C3 is a type of static MOSFET. It consists of four terminals – source, gate, body and drain. The source and drain are connected to the semiconductor’s drain and source electrodes to bond the transistor, while the gate electrode is connected to the transistor’s body which is also known as the substrate. The gate acts as a control terminal for controlling the flow of current between the source and drain.

The working principle of the SPI08N80C3 is based on the increase of drain-source resistance when the gate-source voltage is increased. When no voltage is applied to the gate-source, the transistor will act as a closed switch, with no current flow between the source and drain. When the gate-source voltage is applied to the transistor, it will result in the majority of electrons filling the off-state region near the source and drain terminal. This action will then create a conductive pathway between the source and drain, allowing the current to flow.

The SPI08N80C3 is able to operate at frequencies up to 200MHz, which makes it suitable for a wide range of applications. The transistor is able to operate with a gate threshold of 4V and at temperatures up to 175°C. It has an input capacitance of 500pF, output capacitance of 17pF, and a turn-on time of 200ns.

Conclusion

The SPI08N80C3 is a N-channel MOSFET with an 800V limit and maximum total power dissipation of 25W that is designed for use in high-frequency power converters, motor controls and medium-voltage DC-DC converters. Its working principle is based on the increase in drain-source resistance when the gate-source voltage is increased. The features of this transistor enable it to be used in energy-intensive applications while consuming low power.

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