SPI08N80C3XKSA1

Vgs(th) (Max) @ Id:	3.9V @ 470µA
Package / Case:	TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package:	PG-TO262-3-1
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	104W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1100pF @ 100V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	60nC @ 10V
Series:	CoolMOS™
Rds On (Max) @ Id, Vgs:	650 mOhm @ 5.1A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	8A (Tc)
Drain to Source Voltage (Vdss):	800V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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<---! Start Writing --->The SPI08N80C3XKSA1 is a type of transistor that is classified under transistors, FETs, MOSFETs, and single. It is a high-velocity power MOSFET and is a N-channel device. It is produced with a silicon processing technique that is composed of theDMOS (doubler metal oxide semiconductor) structure. This allow for minimal switching losses for a wide range of applications. This type of transistor is typically used in converters, motor control, and high-speed switching applications. The SPI08N80C3XKSA1 is a three-terminal FFET (Field-effect transistor). It is composed of three terminals, source, drain, and gate. It works by the action of electric field and the biasing of the gate terminal. When the gate is positive, the FET will be turned on, allowing current to flow between source and drain. This is known as saturating the transistor. When the gate is negative, the FET will be turned off, not allowing current to flow between the source and drain. Because of the electric field, the FET is capable of high-speed, high performance operation.In terms of application field, the SPI08N80C3XKSA1 is suitable for switching applications that require high efficiency and minimal switching losses. It can be used in power converters, current rectifiers, power supply circuits, and motor control applications. It is also capable of providing high speed performance, making it ideal for high-frequency switching applications.In terms of its working principle, the SPI08N80C3XKSA1 works by using the field-effect principle. When it is subjected to a positive voltage on its gate terminal, it causes the gate-source junction to reverse-bias, which in turn creates a depletion region. This depletion region acts as an insulator, not allowing current to flow because of the electric field. When the gate is subjected to a negative voltage, the depletion region becomes narrower, allowing current to flow between source and drain. The SPI08N80C3XKSA1 can be used in high speed, high power applications due to its fast switching and low on-state resistance. It has a Vds of 800 volts, a Rds (on) of 4.6 mOhm, and a gate charge of 155 nC. It also has a low Qg of 10.2 nC, making it ideal for FETs-based applications.The SPI08N80C3XKSA1 is a good choice for applications that require high-speed, high power performance. Its application fields include power converters, current rectifiers, power supply circuits, and motor control applications. Its working principle is based on the field-effect principle, which allows for fast switching and low on-state resistance. Its Gate charge and Qg properties make it an ideal device for FETs-based applications.

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