Allicdata Part #: | SPN01N60C3-ND |
Manufacturer Part#: |
SPN01N60C3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 650V 0.3A SOT-223 |
More Detail: | N-Channel 650V 300mA (Ta) 1.8W (Ta) Surface Mount ... |
DataSheet: | SPN01N60C3 Datasheet/PDF |
Quantity: | 1000 |
Series: | CoolMOS™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 650V |
Current - Continuous Drain (Id) @ 25°C: | 300mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 6 Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id: | 3.7V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 5nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 100pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 1.8W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PG-SOT223-4 |
Package / Case: | TO-261-4, TO-261AA |
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The SPN01N60C3 is a high-power field-effect transistor intended for use in power switching applications. It is a high-efficiency and low-loss MOSFET which, when switched on, provides a low resistance path for rapid and reliable power transfer. It is capable of controlling high currents and voltages, making it an ideal choice for use in switching circuits and power supplies.
The SPN01N60C3 is a single-channel device with a peak current rating of 11A and a drain-source voltage rating of 600V. It has a very low gate threshold voltage of 4V and an RDS(on) of 0.35 ohm, providing excellent efficiency when used in high-power applications. The device can also handle high switching frequencies of up to 1MHz, meaning that it can be used in applications where a higher frequency is required. The device also has a built-in temperature protection mechanism which protects the device from thermal runaway and overcurrent conditions.
The device is constructed of two layers of silicon material, with an insulator layer between them. This allows electrons to flow only when the gate voltage is applied, thus controlling the current flow through the drain and source regions. The channel region of the device, when not biased, acts as an opens up path which will remain off, thus preventing current flow through the device. When the gate voltage is applied, the strongly charged electrons create a conduction channel between the source and drain region, allowing current flow through the device. This is known as an enhancement-type MOSFET.
The device is used primarily in power switching applications, such as in DC-DC converters, motor controlling and low-side switching of power supplies. It can also be used for high-current load switching and output rectification. In addition, the device can be used for high-current switching applications, due to its low gate threshold voltage and high current rating. It is also used in slow turn-off applications, such as reverse current protection and high voltage level detection.
The SPN01N60C3 is an ideal choice for use in high-power applications, due to its low-loss, high-efficiency characteristics and temperature protection mechanism. With its peak current and voltage ratings, it is capable of providing reliable and fast power transfer, making it a great choice for use in power switching and control circuits. It is also suitable for use in high-voltage and high-frequency applications, due to its low gate threshold voltage and high switching frequencies.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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SPN01N60C3 | Infineon Tec... | -- | 1000 | MOSFET N-CH 650V 0.3A SOT... |
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