SPN02N60C3 Allicdata Electronics
Allicdata Part #:

SPN02N60C3-ND

Manufacturer Part#:

SPN02N60C3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 650V 0.4A SOT-223
More Detail: N-Channel 650V 400mA (Ta) 1.8W (Ta) Surface Mount ...
DataSheet: SPN02N60C3 datasheetSPN02N60C3 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: CoolMOS™
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 1.1A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 80µA
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V
FET Feature: --
Power Dissipation (Max): 1.8W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-SOT223-4
Package / Case: TO-261-4, TO-261AA
Description

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SPN02N60C3 is a high-performance insulated gate bipolar transistor (IGBT) which is utilized in various applications and scenarios. The device has an HVIC driver input, a high-voltage collector source rectifier, and an N-channel MOSFET. It is attractive in different power conversion stages, because of its extremely low on-state resistance value, low capacitance, and short switching times. This powerful device serves in applications such as AC motors, microwaves, lighting fixtures, power supplies, home appliances, DC drives, and other industrial equipment.

Synchronous rectification is one of the more common operations of this type of technology. This process begins with a signal from a low-voltage integrated circuit (IC). The signal passes through the HVIC driver to the IGBT, where it then commands the N-channel MOSFET to allow currents to flow. This creates a PathA, which is the direct current (DC) output of the sync rectification. The current then flows in a PathB, which forms the negative voltage converter (NVC). The PathA current is then relaxed by the commutation of the N channel MOSFET. Thus, the synchronization of the rectification flow has been completed.

The increased on-state resistance of the SPN02N60C3 helps to reduce the power losses. This is achieved by better utilizing the IGBT s capacity to reduce switching times and optimize its routing paths. The integrated rectifier also helps to reduce cycle times and the complexity of the overall design. The short circuit ratio (SCR) of this device is also applications, allowing for higher output currents. The SPN02N60C3 can handle a maximum voltage of 600 volts and currents up to 60 amperes.

These parameters make the SPN02N60C3 an ideal component for applications which require highly reliable DC/DC and AC/AC converters. Furthermore, its reduced capacitance makes the device suitable for high-voltage, high-switch frequency applications. The device can also be used in various AC circuits, such as those found in HVAC equipment, UPS systems, and lighting control systems. In addition, its fast turn-on and turn-off response time make it suitable for switching systems, DC-DC converters, and other applications which require fast switching speeds.

In summary, the SPN02N60C3 is an extremely powerful IGBT device that is suitable for a wide range of applications. Its low on-state resistance, high switching frequency, and integrated rectifier help to reduce the complexity of the design and improve efficiency. The device is capable of handling large amounts of current, and its short cycle times make it perfect for high-speed switching systems. Its usage in AC- and DC-based systems, as well as lighting control systems, makes it a versatile component for any power application.

The specific data is subject to PDF, and the above content is for reference

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