SPN02N60S5

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The SPN02N60S5 is a high voltage, N-channel MOSFET which offers very low drain-source resistance and excellent dv/dt capability. This device is an ideal choice for applications requiring high input and output impedances, such as switching supplies, dc-dc converters, and audio amplifiers that require high slew rate and fast switching frequency. It is widely used in consumer, automotive and industrial applications.

Introduction

The SPN02N60S5 is an N-Channel Silicon MOSFET manufactured by STMicroelectronics. It is an ideal device for times when small size and low on resistance are essential. The package size of this device is only 1.6mm x 2.5mm, yet the junction temperature is still able to reach 175°C. It is a highly efficient device with a low RDS (on) of 2.6Ω and a low gate charge of only 18nC. The drain current of this part is 2A and its breakdown voltage is 60V.

Application Fields

The SPN02N60S5 is widely used in consumer, automotive and industrial applications. It is a great choice for applications that require high input and output impedance due to its low RDS (on). Due to its high efficiency, it is suitable for switching power supplies, DC-DC converters, and audio amplifiers. This device is also ideal for high speed logic switching and communication interface circuits that require fast switching frequency. Additionally, its high dv/dt capability makes it suitable for automotive and battery powered applications.

Working Principle

The working principle of the SPN02N60S5 MOSFET is based on the application of voltage to the gate terminal. When a positive voltage is applied to the gate terminal, it will create an electric field that attracts electrons from the drain region to the gate region. This creates a conducting channel between the drain and the source region and allows for current to flow from the drain to the source. The larger the applied voltage, the wider the conducting channel and the higher the current flow that can be achieved. Conversely, when the voltage applied to the gate terminal is zero, the channel is no longer conducting and the flow of current is blocked. This is known as the OFF state of the device.

The SPN02N60S5 is designed to have a high input and output impedance, due to its low RDS (on). This device also has excellent dv/dt capability, allowing for faster switching. Additionally, this device has a low gate charge (18nC) and a low drain-source resistance (2.6Ω), ensuring that it operates efficiently and effectively.

Conclusion

The SPN02N60S5 is a high voltage, N-channel MOSFET. It is an ideal device for applications requiring high input and output impedances, such as switching supplies, dc-dc converters, and audio amplifiers. Due to its low RDS (on), it operates efficiently and effectively. Additionally, this device has excellent dv/dt capability and a low gate charge, making it suitable for high speed logic switching and communication interface circuits that require fast switching frequency. The SPN02N60S5 is also highly reliable, and is excellent choice for automotive and battery powered applications.

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