Allicdata Part #: | SQM120P04-04L_GE3TR-ND |
Manufacturer Part#: |
SQM120P04-04L_GE3 |
Price: | $ 1.30 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 40V 120A TO-263 |
More Detail: | P-Channel 40V 120A (Tc) 375W (Tc) Surface Mount TO... |
DataSheet: | SQM120P04-04L_GE3 Datasheet/PDF |
Quantity: | 1000 |
800 +: | $ 1.17369 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263 (D2Pak) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 375W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 13980pF @ 20V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 330nC @ 10V |
Series: | Automotive, AEC-Q101, TrenchFET® |
Rds On (Max) @ Id, Vgs: | 4 mOhm @ 30A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SQM120P04-04L_GE3 is a type of semiconductor that falls in the category of transistors, FETs, MOSFETs, and single. It is designed to be used in a variety of applications, and has a wide range of working principles. It is used to amplify and switch electronic signals, and can be found in most electronic circuits.
The SQM120P04-04L_GE3 is an insulated-gate field-effect transistor, or I-FET. This type of transistor consists of a p-type and n-type substrate and gate region. The gate is insulated from the source and drain by a layer of insulation, usually silicon dioxide. By applying a voltage to the gate, the current between the source and drain can be controlled. This type of transistor has a wide range of uses, from power amplifiers to digital logic circuits.
The working principle behind the SQM120P04-04L_GE3 is the field-effect transistor. The principle is simple and straightforward. When a voltage is applied to the gate, a depletion layer will form at the interface between the p-type and n-type bodies of the transistor. The depletion layer creates a resistance, which is known as the field-effect. This resistance serves as a barrier that can control the current between the source and drain. A voltage applied to the gate will reduce the resistance, allowing more current to flow. Conversely, if the voltage on the gate is decreased, the resistance will increase, reducing the current flow between the source and drain. This allows the SQM120P04-04L_GE3 to be used as an amplifier and switch.
The SQM120P04-04L_GE3 has a wide range of applications. It is often used for switching and amplifying signals in digital circuits, such as those found in computers and other devices. It can also be used for power amplifiers, allowing even large current flows to be switched with relative ease. In addition, the SQM120P04-04L_GE3 can be used in power supplies and other devices where good noise immunity and low power consumption are important factors.
In conclusion, the SQM120P04-04L_GE3 is a type of transistor that falls into the category of transistors, FETs, MOSFETs, and single. Its working principle is based on the field-effect transistor, which utilizes a depletion layer to control the current flow between the source and drain. The SQM120P04-04L_GE3 has a wide range of applications, from digital logic circuits to power amplifiers. It provides good noise immunity and low power consumption, making it an ideal choice for many types of applications.
The specific data is subject to PDF, and the above content is for reference
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