SQP120P06-6M7L_GE3 Allicdata Electronics
Allicdata Part #:

SQP120P06-6M7L_GE3-ND

Manufacturer Part#:

SQP120P06-6M7L_GE3

Price: $ 1.44
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: P-CHANNEL 60-V (D-S) 175C MOSFET
More Detail:
DataSheet: SQP120P06-6M7L_GE3 datasheetSQP120P06-6M7L_GE3 Datasheet/PDF
Quantity: 1000
500 +: $ 1.29888
Stock 1000Can Ship Immediately
$ 1.44
Specifications
Series: --
Part Status: Active
Description

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SQP120P06-6M7L_GE3 is a high power 45V, 120A Mosfet power transistor. The device is designed specifically for critical circuit applications such as server and telecom power supplies, automotive power systems, and industrial motor controllers. This transistor features low power loss and simple drive circuitry. It is environmentally friendly, RoHS compliant and lead-free.

Application Field of SQP120P06-6M7L_GE3

The SQP120P06-6M7L_GE3 is a Mosfet power transistor that is most suitable for consumer, industrial and automotive power applications. It is especially useful in switch mode power supplies. It can be used to design high efficiency circuits with high noise immunity. It can also be employed in DC/DC voltage converter applications, such as low noise switching power amplifiers, linear regulators, voltage regulators, and switching motors. The SQP120P06-6M7L_GE3 is also suitable for applications that require a low on-resistance, stability at high temperatures and low gate charge.

Working Principle of SQP120P06-6M7L_GE3

The SQP120P06-6M7L_GE3 is a MOSFET power transistor with a low on resistance and a high peak current rating. The main advantage of the MOSFET is its capability to switch quickly, with low input drive current, and with minimal heat dissipation. To initiate conduction, a positive voltage is applied to the gate terminal. The positive voltage causes the insulated gate region in the transistor to become charged, creating a thin conducting channel through the N-type drain and source regions. This conductive channel reduces the resistance between the drain and the source, allowing current to flow. While in conduction, an increased voltage applied to the gate will widen the channel, and lower the on-resistance of the transistor.

When the gate voltage is removed, the channel is destroyed, causing the resistance between the drain and the source to become high, which prevents current from flowing. This process allows for the MOSFET to be used as an amplifier and power switch. The magnitude of the gate voltage determines the conductivity of the transistor, allowing for precise control of the current flow through the device.

Advantages of SQP120P06-6M7L_GE3

The SQP120P06-6M7L_GE3 is a versatile power transistor suitable for a variety of power applications. It has a low gate charge and on-resistance and can be quickly turned on and off. The device is also RoHS compliant and environmentally friendly. It is cost effective, lower in power loss and easier to drive than other MOSFETs, making it an ideal choice for many power applications.

The specific data is subject to PDF, and the above content is for reference

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