Allicdata Part #: | SSM5N16FUTE85LFTR-ND |
Manufacturer Part#: |
SSM5N16FUTE85LF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N-CH 20V 0.1A USV |
More Detail: | N-Channel 20V 100mA (Ta) 200mW (Ta) Surface Mount ... |
DataSheet: | SSM5N16FUTE85LF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | -- |
Package / Case: | 5-TSSOP, SC-70-5, SOT-353 |
Supplier Device Package: | USV |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 200mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 9.3pF @ 3V |
Vgs (Max): | ±10V |
Series: | π-MOSVI |
Rds On (Max) @ Id, Vgs: | 3 Ohm @ 10mA, 4V |
Drive Voltage (Max Rds On, Min Rds On): | 1.5V, 4V |
Current - Continuous Drain (Id) @ 25°C: | 100mA (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SSM5N16FUTE85LF is a FET, also known as a Field Effect Transistor, and it belongs to the Single MOSFETs category. This device is one of the most widely used transistors, and it plays a role in many different applications. In this article, we will discuss the application field and working principle of the SSM5N16FUTE85LF.
At its core, a FET is a semiconductor device with three terminals: source, gate, and drain. The source and drain can be either n-type or p-type material and the gate is insulated from the channel. FETs have high input impedance compared to other transistors, which makes them ideal for use in many applications where isolation between input and output is required.
The SSM5N16FUTE85LF is a N-Channel Enhancement FET that is typically used in high-performance analog switching applications. This device is capable of very fast switching speeds thanks to its high transconductance and low gate charge values. It is also capable of handling large amounts of current (up to 16 A), making it an ideal choice for high power applications. Additionally, this device has a low threshold voltage, which makes it an ideal choice for switching at low voltages. Because of these characteristics, the SSM5N16FUTE85LF is an ideal choice for many applications, such as high-speed analog switching, power supply control, and RF switching.
The working principle of a FET is quite simple. When a small voltage is applied to the gate terminal, the device will turn on and current will flow from the source to the drain. This works in the opposite direction as well, and with the proper logic applied, this device can be used for logic gates. The transistors used in most logic applications are typically MOSFETs, which are a type of FET. The SSM5N16FUTE85LF belongs to this class of transistors, as it is an N-Channel Enhancement FET.
The SSM5N16FUTE85LF is an ideal choice for many different applications. Its small size, high performance, and low voltage operation make it well-suited for use in any number of applications, such as high-speed analog switching, power supplies, RF switching, and logic gate operations. It is also highly reliable and durable, with a long life expectancy. By carefully designing the circuit with the characteristics of the SSM5N16FUTE85LF in mind, designers can create circuits that are reliable and have the desired performance.
The specific data is subject to PDF, and the above content is for reference
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