SSM5N15FU,LF

Vgs(th) (Max) @ Id:	--
Package / Case:	5-TSSOP, SC-70-5, SOT-353
Supplier Device Package:	USV
Mounting Type:	Surface Mount
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	200mW (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	7.8pF @ 3V
Vgs (Max):	±20V
Series:	π-MOSVI
Rds On (Max) @ Id, Vgs:	4 Ohm @ 10mA, 4V
Drive Voltage (Max Rds On, Min Rds On):	2.5V, 4V
Current - Continuous Drain (Id) @ 25°C:	100mA (Ta)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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SSM5N15FU,LF is a low voltage N-Channel Enhancement Mode Field-Effect Transistor (MOSFET). It consists of four main terminals: drain (D), source (S), gate (G) and substrate (Sub). The SSM5N15FU,LF transistor is often used as a power switch because of its low on-resistance, high switching speed and very good efficiency. It is often used in many electronic circuits and applications.The SSM5N15FU,LF is classified as a single type of MOSFET transistor because it has only two terminals (source and drain). It is also considered an enhancement mode (or "depletion mode") FET, meaning that no gate voltage (Vgs) is required to turn the MOSFET on, instead it is turned on by increasing the gate-source voltage (Vgs) above the threshold voltage (Vth). This type of transistor is used under higher operating temperatures and it is required to have a high on-resistance (Rds_on).The working principle of the SSM5N15FU,LF is based on the basic principle of field-effect transistors. As the gate-source voltage is increased, an electric field is created in the channel region which attracts the majority carriers (electrons or holes) from the source region and onto the channel, thus increasing the conducting channel. This process is known as the electron inversion mechanism. When the gate-source voltage is below the threshold voltage (Vth), the channel is heavily resistive and the current flowing between the source and the drain is very negligible.The SSM5N15FU,LF is commonly used in many areas of electronics, such as automotive, consumer, industrial, communications and mobile computing circuits. It can be used in power switching applications in power supplies, DC-DC converters, inverters and DC motors. This type of transistor is also used to control the current in amplifiers and switching regulators. Its low power dissipation and wide range of operating conditions make it a popular choice for many applications.In summary, the SSM5N15FU,LF transistor is classified as a single type of MOSFET and enhancement mode FET, with low on-resistance, high switching speed and very good efficiency. It is commonly used in many electronics applications, such as automotive, consumer, industrial, communications and mobile computing circuits. Its working principle is based on the electron inversion mechanism, by creating an electric field in the channel region which attracts the majority carriers and forms the conducting channel.

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