SSR1N60BTM_F080 Allicdata Electronics
Allicdata Part #:

SSR1N60BTM_F080-ND

Manufacturer Part#:

SSR1N60BTM_F080

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 600V 0.9A DPAK
More Detail: N-Channel 600V 900mA (Tc) 2.5W (Ta), 28W (Tc) Surf...
DataSheet: SSR1N60BTM_F080 datasheetSSR1N60BTM_F080 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 215pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 12 Ohm @ 450mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 900mA (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The SSR1N60BTM_F080 is an FET power transistor manufactured by ON Semiconductor. It is part of their large portfolio of products, covering a wide range of industrial and consumer applications.

The SSR1N60BTM_F080 is a single-gate MOSFET, a type of field-effect transistor that is commonly used in both power and non-power applications. It is designed to be used as a voltage regulator, providing constant voltage regulation that is independent of variations in load current. Other applications include current regulation, signal switching, and noise suppression.

The SSR1N60BTM_F080 employs an advanced internal design that provides superior performance in harsh environments. It has a low on-state resistance of less than 1 ohm, and a maximum drain-source voltage rating of 80 volts DC.

The SSR1N60BTM_F080 works by allowing power to pass through when the gate-source voltage reaches a certain threshold. This threshold voltage is determined by an external voltage source, typically a negative voltage. When this voltage is applied to the gate, the transistor enters a conducting state and allows current to pass through from the drain to the source.

The SSR1N60BTM_F080 is designed to be used in a wide range of applications, including automotive and industrial systems. It is highly reliable and cost-effective, and is suitable for both high-current and low-current applications. It is also available in both through-hole and surface-mount packages.

The SSR1N60BTM_F080 is a versatile and reliable power transistor capable of providing excellent performance in a wide range of conditions. It is easy to use and integrate into any circuit, and its advanced design ensures that it will perform well in all kinds of environments.

The specific data is subject to PDF, and the above content is for reference

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