
Allicdata Part #: | SSR1N60BTM_F080-ND |
Manufacturer Part#: |
SSR1N60BTM_F080 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 600V 0.9A DPAK |
More Detail: | N-Channel 600V 900mA (Tc) 2.5W (Ta), 28W (Tc) Surf... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 28W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 215pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 7.7nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 12 Ohm @ 450mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 900mA (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The SSR1N60BTM_F080 is an FET power transistor manufactured by ON Semiconductor. It is part of their large portfolio of products, covering a wide range of industrial and consumer applications.
The SSR1N60BTM_F080 is a single-gate MOSFET, a type of field-effect transistor that is commonly used in both power and non-power applications. It is designed to be used as a voltage regulator, providing constant voltage regulation that is independent of variations in load current. Other applications include current regulation, signal switching, and noise suppression.
The SSR1N60BTM_F080 employs an advanced internal design that provides superior performance in harsh environments. It has a low on-state resistance of less than 1 ohm, and a maximum drain-source voltage rating of 80 volts DC.
The SSR1N60BTM_F080 works by allowing power to pass through when the gate-source voltage reaches a certain threshold. This threshold voltage is determined by an external voltage source, typically a negative voltage. When this voltage is applied to the gate, the transistor enters a conducting state and allows current to pass through from the drain to the source.
The SSR1N60BTM_F080 is designed to be used in a wide range of applications, including automotive and industrial systems. It is highly reliable and cost-effective, and is suitable for both high-current and low-current applications. It is also available in both through-hole and surface-mount packages.
The SSR1N60BTM_F080 is a versatile and reliable power transistor capable of providing excellent performance in a wide range of conditions. It is easy to use and integrate into any circuit, and its advanced design ensures that it will perform well in all kinds of environments.
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