
Allicdata Part #: | SSR1N60BTM-WS-ND |
Manufacturer Part#: |
SSR1N60BTM-WS |
Price: | $ 0.19 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 600V 0.9A DPAK |
More Detail: | N-Channel 600V 900mA (Tc) 2.5W (Ta), 28W (Tc) Surf... |
DataSheet: | ![]() |
Quantity: | 1000 |
2500 +: | $ 0.17253 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta), 28W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 215pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 7.7nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 12 Ohm @ 450mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 900mA (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Not For New Designs |
Packaging: | Tape & Reel (TR) |
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The SSR1N60BTM-WS is a silicon-controlled rectifier (SCR) that is a type of thyristor. It is a unidirectional semiconductor device, meaning that it has two terminals for controlling current in one direction. This SCR can be used in a variety of applications including as a switch, relay, timer, or amplifier. It is also commonly used in power-control circuits, such as those in automotive applications, motor control, and power supplies.
The SSR1N60BTM-WS is a Single Gate Field Effect Transistor (FET) and is made of a single piece of silicon. The gate, source and drain terminals are on the top of the device, with an oxide-insulated gate allowing the device to be opened and closed. It is an enhancement-mode FET, meaning that it can be switched on by applying a positive voltage to the gate.
A key feature of the SSR1N60BTM-WS is its low on-resistance, which allows it to handle higher power loads. It is also capable of withstanding high temperatures and can be used in harsh environments.
The SSR1N60BTM-WS is often used for applications where high speed, low power loss and precise switching are important. It is typically used for switching power from one circuit to another in industrial and commercial applications, such as motor control, electronics product testing, and motor control systems.
In addition, the SSR1N60BTM-WS can be used as a galvanic isolation device, meaning that it is capable of providing isolation between two circuits while allowing them to interact. This can be useful in applications where high voltage barriers need to be maintained between circuits while they are performing operations together, such as in telecommunications or in medical testing equipment.
The working principle of the SSR1N60BTM-WS is based on the principle of capacitive-coupled gate control. This means that the gate is connected to the source and drain terminals via a capacitor, which is then used to control the flow of current between the two. By changing the voltage on the gate, the device can be turned on or off, which allows control of the current flow.
The SSR1N60BTM-WS is versatile, reliable, and efficient device that can be used in a wide range of applications. Its low on-resistance allows it to handle large power loads while still providing precise switching. It is also capable of high temperatures and provides galvanic isolation, making it an ideal choice for various industrial and commercial applications.
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