SSR1N60BTM-WS Allicdata Electronics
Allicdata Part #:

SSR1N60BTM-WS-ND

Manufacturer Part#:

SSR1N60BTM-WS

Price: $ 0.19
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 600V 0.9A DPAK
More Detail: N-Channel 600V 900mA (Tc) 2.5W (Ta), 28W (Tc) Surf...
DataSheet: SSR1N60BTM-WS datasheetSSR1N60BTM-WS Datasheet/PDF
Quantity: 1000
2500 +: $ 0.17253
Stock 1000Can Ship Immediately
$ 0.19
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 215pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 12 Ohm @ 450mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 900mA (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Not For New Designs
Packaging: Tape & Reel (TR) 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SSR1N60BTM-WS is a silicon-controlled rectifier (SCR) that is a type of thyristor. It is a unidirectional semiconductor device, meaning that it has two terminals for controlling current in one direction. This SCR can be used in a variety of applications including as a switch, relay, timer, or amplifier. It is also commonly used in power-control circuits, such as those in automotive applications, motor control, and power supplies.

The SSR1N60BTM-WS is a Single Gate Field Effect Transistor (FET) and is made of a single piece of silicon. The gate, source and drain terminals are on the top of the device, with an oxide-insulated gate allowing the device to be opened and closed. It is an enhancement-mode FET, meaning that it can be switched on by applying a positive voltage to the gate.

A key feature of the SSR1N60BTM-WS is its low on-resistance, which allows it to handle higher power loads. It is also capable of withstanding high temperatures and can be used in harsh environments.

The SSR1N60BTM-WS is often used for applications where high speed, low power loss and precise switching are important. It is typically used for switching power from one circuit to another in industrial and commercial applications, such as motor control, electronics product testing, and motor control systems.

In addition, the SSR1N60BTM-WS can be used as a galvanic isolation device, meaning that it is capable of providing isolation between two circuits while allowing them to interact. This can be useful in applications where high voltage barriers need to be maintained between circuits while they are performing operations together, such as in telecommunications or in medical testing equipment.

The working principle of the SSR1N60BTM-WS is based on the principle of capacitive-coupled gate control. This means that the gate is connected to the source and drain terminals via a capacitor, which is then used to control the flow of current between the two. By changing the voltage on the gate, the device can be turned on or off, which allows control of the current flow.

The SSR1N60BTM-WS is versatile, reliable, and efficient device that can be used in a wide range of applications. Its low on-resistance allows it to handle large power loads while still providing precise switching. It is also capable of high temperatures and provides galvanic isolation, making it an ideal choice for various industrial and commercial applications.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "SSR1" Included word is 9
Part Number Manufacturer Price Quantity Description
PX20-SSR15K-D2-2 JAE Electron... 0.0 $ 1000 CONN PCMCIA CARD
SSR1N60BTM ON Semicondu... 0.0 $ 1000 MOSFET N-CH 600V 0.9A DPA...
PX22-SSR10K-A2 JAE Electron... 0.0 $ 1000 CONN PCMCIA CARD PUSH-PUS...
SSR1N60BTM-WS ON Semicondu... 0.19 $ 1000 MOSFET N-CH 600V 0.9A DPA...
PX20-SSR15K-D2-3 JAE Electron... 0.0 $ 1000 CONN PCMCIA CARD
SSR1N60BTM_F080 ON Semicondu... 0.0 $ 1000 MOSFET N-CH 600V 0.9A DPA...
PX22-SSR10K-D2-1 JAE Electron... 0.0 $ 1000 CONN PCMCIA CARD
PX20-SSR15K-C2 JAE Electron... 0.0 $ 1000 CONN PCMCIA CARD PUSH-PUS...
PX21-SSR15H-A JAE Electron... 0.0 $ 1000 CONN PCMCIA CARD
Latest Products
IRFL31N20D

MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

IRFL31N20D Allicdata Electronics
IXTT440N055T2

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

IXTT440N055T2 Allicdata Electronics
IXTH14N80

MOSFET N-CH 800V 14A TO-247N-Channel 800...

IXTH14N80 Allicdata Electronics
IXFT23N60Q

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

IXFT23N60Q Allicdata Electronics
IXTT72N20

MOSFET N-CH 200V 72A TO-268N-Channel 200...

IXTT72N20 Allicdata Electronics
IXFT9N80Q

MOSFET N-CH 800V 9A TO-268N-Channel 800V...

IXFT9N80Q Allicdata Electronics