SSR1N60BTM

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The SSR1N60BTM is a single, N-channel MOSFET that is made by Toshiba, a Japanese multinational conglomerate. The device is a medium-power, low-on-resistance, insulated-gate voltage-controlled FET (VFET). The SSR1N60BTM is designed for a wide range of uses including switching, sensing, and amplifying. It is a good choice for applications that require high current capacity and tightly controlled voltage and current levels.

The SSR1N60BTM is mainly used in industrial power supply circuits and high-efficiency DC-DC converter systems. It is also suitable for use in switching power supplies, electronic ballasts, and power modules. The device offers superior performance, excellent stability, and high efficiency for a range of applications.

The SSR1N60BTM is composed of a single, insulated gate voltage-controlled FET (VFET) with a high input impedance and a large on-resistance. The device features a low gate threshold voltage of 3V and a drain-source breakdown voltage of 60V. It is also capable of passing up to 6A of current, making it suitable for a variety of applications.

The SSR1N60BTM is designed to be operated under either DC or AC conditions. In DC applications, the device can be used to switch on and off large currents quickly and with minimal risk of overvoltage. In AC applications, the device can be employed to control a range of currents with high turn-on and turn-off performance.

The SSR1N60BTM has excellent thermal characteristics and can withstand high temperatures. It is designed to be used in environments up to 150°C and its on-state impedance remains stable over a wide range of temperatures. The device also features a low profile package, meaning it can fit into a wide variety of designs.

The SSR1N60BTM is a versatile and reliable device that is capable of performing a variety of switching and sensing tasks with minimal power loss. It is suitable for a range of applications, including industrial power supply circuits, high-efficiency DC-DC converter systems, switching power supplies, electronic ballasts, and power modules.

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