Allicdata Part #: | 497-13293-ND |
Manufacturer Part#: |
STAC2932BW |
Price: | $ 80.30 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | TRANS RF PWR N-CH 300W STAC244B |
More Detail: | RF Mosfet N-Channel 50V 250mA 175MHz 390W STAC244... |
DataSheet: | STAC2932BW Datasheet/PDF |
Quantity: | 56 |
1 +: | $ 72.99180 |
10 +: | $ 69.22630 |
100 +: | $ 62.63310 |
Series: | -- |
Packaging: | Tray |
Part Status: | Active |
Transistor Type: | N-Channel |
Frequency: | 175MHz |
Gain: | -- |
Voltage - Test: | 50V |
Current Rating: | 40A |
Noise Figure: | -- |
Current - Test: | 250mA |
Power - Output: | 390W |
Voltage - Rated: | 125V |
Package / Case: | STAC244B |
Supplier Device Package: | STAC244B |
Base Part Number: | STAC2932 |
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Introduction:
STAC2932BW is a high-performance radio frequency (RF) field effect transistor (FET) designed by the TAICOM Semiconductor Company. This FET has a very wide range of applications in the commercial, industrial, and aerospace industries. It can be used in a number of projects and processes which require a high-level of radio frequency control and performance. This article explains the working principle and application field of the STAC2932BW.
What is an FET and how does it work?
A field effect transistor (FET) is a type of electronic component that is used to control the flow of current in a circuit. It is made up of a thin layer of semiconductor material (the gate) between two metal plates (the source and drain). A voltage is applied to the gate and this creates an electric field which controls the current that is allowed to flow through the transistor. While the design of FETs varies, in general they all function by allowing the current to pass through the source, through the gate, and finally out of the drain.
Features of the STAC2932BW:
The STAC2932BW FET is an optimized transistor for RF applications and has a very impressive set of features. It is a low-power device, with a single-gate heat generation of 6 µW, making it ideal for low-power applications such as mobile phones or Wi-Fi networks. It has a very low gate-source capacitance of 0.45pF, reducing the amount of noise generated. It also features a very wide frequency range of 2–4GHz, making it suitable for a variety of applications. Finally, it offers excellent linearity, at more than 40dBm, which makes it possible to transmit high power signals with excellent accuracy.
Applications:
The STAC2932BW FET is suitable for a variety of RF applications. It can be used to create amplifiers, filters and oscillators, as well as radio transmitters and receivers. It is also popular in RF communication systems where a high quality signal is needed, such as those used in spacecrafts. Furthermore, the STAC2932BW is used in satellite navigation systems, GPS tracking networks, military radars and Wi-Fi networks, due to its reliable performance in high frequency environments. Finally, it is also used in a variety of consumer electronic devices such as TVs, radios and mobile phones.
Conclusion:
The STAC2932BW FET is a high-performance device used in a variety of RF applications. It features a wide range of features, such as low-power consumption, low gate-source capacitance and high linearity, which make it suitable for a number of applications such as wireless communication systems and RF amplifiers. With its many advantages and features, the STAC2932BW is sure to remain a popular choice among RF engineers and hobbyists alike.
The specific data is subject to PDF, and the above content is for reference
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