STAC2932F

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The STAC2932F Field Effect Transistor (FET) is a high-performance semiconductor device in a small, surface-mount package. It is a reliable and robust transistor used in a wide range of applications in fields such as cellular, RF, and audio electronics. The STAC2932F is a common-gate N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with an input capacitance of 28 pF. It is designed for high frequency and easy impedance matching applications.

The STAC2932F is primarily used in RF (radio frequency) amplifiers and mixers. It is ideal for low noise figure amplifier and mixer applications with frequency range up to 3.5 GHz. The device has low noise and high linearity, which makes it suitable for use in radios and TVs, wireless communication systems, and receivers. The device can also be used in LNB (Low-Noise-Block Downconverter) applications.

The STAC2932F is a N-channel FET. The N-channel is created by a gate connected to a source, creating a source/drain region that switches between a P-channel (switched on) and an N-channel (switched off). This simple design offers very fast switching times, which makes it ideal for high speed switching applications. The total gate capacitance of the device is 28 pF, which is a significant advantage in RF applications.

The STAC2932F is designed to operate at high frequencies. The DC bias and power ratings are optimized to minimize the effects of attenuation and provide superior linearity over a wide frequency range. The current transfer ratio (CTR) is highly dependent on the gate voltage, allowing high linearity at various frequencies.
The cutoff frequency for the device is 3.5 GHz. This high frequency enables the device to be used in high-speed applications such as cell phones and wireless LAN devices.

The STAC2932F has a RDS(on) value of 12.4 mOhm, which is low for an FET device. Low RDS(on) values allow for efficient power dissipation. This makes the STAC2932F a good choice for high-power applications. Additionally, the device has a low thermal resistance and an improved breakdown voltage of 35V (nm-channel).

The STAC2932F is a reliable and robust FET. It is designed to provide high-performance operation over a wide frequency range. The low gate capacitance, low noise, and high linearity make it ideal for high frequency, low noise figure, and impedance matching applications. The low thermal resistance, low RDS(on) values, and high breakdown voltage make it suitable for high-power applications. The STAC2932F is a versatile and reliable FET solution for a variety of applications.

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